
Allicdata Part #: | FQPF47P06YDTU-ND |
Manufacturer Part#: |
FQPF47P06YDTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 30A TO-220F |
More Detail: | P-Channel 60V 30A (Tc) 62W (Tc) Through Hole TO-22... |
DataSheet: | ![]() |
Quantity: | 138 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Formed Leads |
Supplier Device Package: | TO-220F-3 (Y-Forming) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 62W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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FQPF47P06YDTU is a P-channel metal-oxide-semiconductor field-effect transistor (MOSFET) produced by NXP Semiconductors. It is a self-protected power MOSFET specifically designed to achieve an optimal balance between on-resistance, avalanche performance and gate charge.
The FQPF47P06YDTU features typical RDS(on) of 2.35Ω at VGS= 10V. It provides very high current carrying capability and avalanche capability. It has low gate charge, low overdrive voltage and fast switching capabilities. The FQPF47P06YDTU is also RoHS compliant and available in the SO-8 package.
The FQPF47P06YDTU transistor can be used in a wide variety of applications, such as: high side switching, load switching and high current general purpose amplification. It is especially suitable for applications with limited PC board layout space, however, it can also be used in any application where a low on-resistance and high current carrying capability is required.
The operation of a MOSFET is based on the principles of capacitive coupling. A MOSFET consists of two capacitors, the gate-to-drain capacitance, and the gate-to-source capacitance. The application of a voltage to the gate terminal creates an electric field between the gate and the channel (drain-to-source) that controls the current flowing across the MOSFET channel. The voltage applied to the gate causes an increase in the electric field, and subsequently causes a change in the capacitance of the MOSFET. This change in capacitance is used to increase or decrease the amount of current flowing through the device.
The FQPF47P06YDTU can be considered as a low-side switch since the Drain is connected to the Source, while the Gate is connected to ground. When a voltage is applied to the gate, it induces an electric field between the Source and Drain, which increases the capacitance between them and allows more current to flow between them. When the voltage at the Gate is removed, the electric field dissipates and the Source-to-Drain current reduces.
The FQPF47P06YDTU is a very powerful, reliable and versatile transistor that is suitable for a wide range of applications. It can be used to quickly and easily switch high current levels, and is ideal for use in applications with limited PC board layout space. In addition, its low on-resistance and avalanche capability make it perfect for applications that require fast switching and precise control.
The specific data is subject to PDF, and the above content is for reference
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