Allicdata Part #: | FQPF27P06FS-ND |
Manufacturer Part#: |
FQPF27P06 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 17A TO-220F |
More Detail: | P-Channel 60V 17A (Tc) 47W (Tc) Through Hole TO-22... |
DataSheet: | FQPF27P06 Datasheet/PDF |
Quantity: | 1091 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 47W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 8.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FQPF27P06 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a discrete component type of Single, and is manufactured by the company Fairchild Semiconductor. It is a logic level, P-channel MOSFET consisting of a silicon gate, drain and source terminals. In terms of power dissipation, the FQPF27P06 has a drain-source breakdown voltage rating of -20V and a drain current of -150mA, making it suitable for use in low power applications. In terms of its application fields, the FQPF27P06 is commonly used in high frequency power conversion, battery management, and portable consumer electronics.
The FQPF27P06 works by using the electrical field between the gate and the source of the FET to regulate the current flow between the source and drain. When the gate and source terminals of the FET are connected to a voltage source, the voltage applied to the gate terminal creates an electric field that controls the current flow from the source to the drain. This phenomenon is known as the \'gate effect\' and is one of the main factors that separate Field Effect Transistors from traditional Bipolar Junction Transistors.
Once a voltage is applied to the gate terminal, the current flow from the source to the drain increases exponentially, up to the peak drain current rating of the FET. This means that the FQPF27P06 can function as a voltage-controlled switch for any current that is below the device\'s maximum current rating.
The FQPF27P06 also features a high input impedance, meaning it can be used to regulate current in low-impedance load circuits. This is due to the fact that the FQPF27P06 has a very small internal resistance between the gate and source terminals, causing minimal voltage drop when a voltage source is applied. This feature makes the FQPF27P06 ideal for use in voltage control applications, such as motor speed control and digital signal switching.
In conclusion, the FQPF27P06 is an easy-to-use MOSFET that is suitable for numerous low-power applications. Its low power dissipation ratings, high input impedance, and voltage-controlled switching make it an ideal choice for portable consumer electronics, high frequency power conversion, and battery management applications.
The specific data is subject to PDF, and the above content is for reference
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