Allicdata Part #: | FQPF6P25-ND |
Manufacturer Part#: |
FQPF6P25 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 250V 4.2A TO-220F |
More Detail: | P-Channel 250V 4.2A (Tc) 45W (Tc) Through Hole TO-... |
DataSheet: | FQPF6P25 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 780pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 2.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQPF6P25 is one of the most popular field-effect transistors (FETs), and is a type of insulated gate field-effect transistor (IGFET) or metal oxide semiconductor field-effect transistor (MOSFET). It is used in a wide variety of applications, and is one of the most commonly used FETs in the world. This article will discuss its application fields, working principle and design.
Applications
FQPF6P25 is most commonly used in power electronics as it has an excellent current carrying capability and an almost ideal on-state resistance. It has an extremely low gate charge, allowing it to be used with very high speed control signals. It is also highly stable, allowing it to be used in high-reliability applications. It is often used in power supplies, motor drivers, pulse generators, audio amplifiers, and in high-power switching circuits. It is also popular for its high-temperature operation, making it suitable for high reliability and high power requirements.
Working Principle
FQPF6P25 works on the same principle as other field-effect transistors. It consists of a sandwich structure of three layers of material; the source, the gate, and the drain. The source provides the input signal and the drain provides the output signal. In between these two is the gate, which is controlled by the voltage signal that is applied to the gate electrode. Depending on the voltage applied to the gate, the flow of electrons between the source and the drain is either allowed or blocked. This is how the transistor works as an amplifier or switch.
Design
FQPF6P25 is designed to have an extremely low gate charge, making it suitable for high frequency and high speed applications. Its body is made of a special semiconductor material that is highly resistive to heat and can withstand high temperatures. Its source and drain leads are typically made of metals such as copper or gold to ensure good contact. Its gate is made of transparent conductive oxide and is closely coupled to the source and drain, ensuring good control of the device.
FQPF6P25 is a reliable, high-speed, and high-power field-effect transistor that is used in a variety of different applications. It is suitable for use in power supplies, motor drivers, pulse generators, audio amplifiers, and in high-power switching circuits. Its low gate charge and high-temperature operation make it suitable for high reliability and high power requirements.
The specific data is subject to PDF, and the above content is for reference
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