Allicdata Part #: | FQPF13N50C-ND |
Manufacturer Part#: |
FQPF13N50C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 13A TO-220F |
More Detail: | N-Channel 500V 13A (Tc) 48W (Tc) Through Hole TO-2... |
DataSheet: | FQPF13N50C Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2055pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 480 mOhm @ 6.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQPF13N50C MOSFET is a better choice of power MOSFETS with pre-biased gate and source pins. It has higher efficiency and higher power density than any other device in the power MOSFET family. This particular device has a low gate threshold voltage,which makes it suitable for use in applications requiring high switching speeds.
The FQPF13N50C MOSFET is designed for use in high-voltage, high-current applications and is suitable for applications such as power converters and automated motor control. This MOSFET provides an effective thermal solution to these applications due to its low thermal resistance, minimized power loss and improved operating temperature range. Additionally, it is suitable for high frequency operation and thus, exhibits low switching losses.
The FQPF13N50C MOSFET is a N-channel enhancement-mode device, meaning the output is normally turned off. Therefore, the gate voltage must be higher than the source voltage for the device to turn on. The drain-source voltage (Vds) of the device is limited by its maximum resistive load and is also determined by its maximum drain current (Id), which is set by the maximum drain-source voltage (Vds).
In addition to its high performance characteristics, the FQPF13N50C MOSFET is also available in a surface-mount package, which is both cost and space efficient. This package also facilitates easy installation and removal and helps reduce overall system cost. Lastly, this device features an embedded body diode which minimizes switching times and provides protection against inductive loads.
The FQPF13N50C MOSFET is an ideal choice for applications that require high efficiency, high power density, and low thermal resistance. In addition, its low gate threshold voltage makes it suitable for use in applications requiring high switching speeds. Furthermore, the cost- and space-efficient surface-mount package as well as its embedded body diode help reduce system costs and improve system performance. These characteristics make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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