Allicdata Part #: | FQPF9N50-ND |
Manufacturer Part#: |
FQPF9N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 5.3A TO-220F |
More Detail: | N-Channel 500V 5.3A (Tc) 50W (Tc) Through Hole TO-... |
DataSheet: | FQPF9N50 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1450pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 730 mOhm @ 2.65A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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FQPF9N50 is a power MOSFET which is widely used in various applications. This MOSFET is a single device, with a maximum drain current of 9A and a maximum drain-souce voltage of 500V. It is ideal for load switching and power conversion applications in industrial, automotive and consumer electronics.The FQPF9N50 is a Field-Effect Transistor (FET) which utilizes a MOSFET as its device technology. It is specifically a JFET (Junction Field-Effect Transistor), which is a type of unipolar transistor with three terminals. The gate is used as the controlling input and the source and drain serve as outputs.The FQPF9N50 is a N-channel device, meaning that the controlling gate is connected to the source, while negative charge carriers flow from the source to the drain. This is important to consider when connecting the device in a circuit, as care should be taken to avoid overdriving the gate.The FQPF9N50 utilizes a unique working principle. Unlike its BJT (Bipolar Junction Transistor) counterpart, which relies on carriers of opposite type (negative and positive carriers) to control a circuit, the FET uses a single type—in the case of the FQPF9N50, negative carriers. When a positive voltage is applied to the gate of the FQPF9N50, it attracts negative charge carriers from the n-type semiconductor material surrounding it. This attracts positive charge carriers from the N-type material, which then accumulate at the gate-channel junction, forming an inversion layer.This inversion layer provides an alternate conductive path for the source-drain current and increases the effective “channel” in the device. In essence, the gate voltage serves to control the source-drain current. Thus, the FET acts more like a switch than a circuit element, allowing very efficient power conversion.The FQPF9N50 is a versatile device and is used in many different applications. It is often used in switching circuits, where it is used to switch heavy loads with very low loss. It is also employed in power supply circuits, acting as a switch to control the flow of current. It can also be used as a voltage regulator. Other applications include Class-D amplifiers, Motor Drives, and Uninterruptible Power Supplies.The FQPF9N50 is an ideal candidate for applications that require a high power switch, with low losses and high efficiency. Its versatile operating principles makes it suitable for a range of different applications, and its low on-resistance makes it ideal for power conversion and speed control applications.
The specific data is subject to PDF, and the above content is for reference
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