FQPF45N15V2

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	66W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3030pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	94nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	40 mOhm @ 22.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	45A (Tc)
Drain to Source Voltage (Vdss):	150V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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FQPF45N15V2 is a N-channel MOSFET transistor, which is largely used in various fields and applications. It is also known as a ‘Power MOSFET’ due to its large voltage and current handling capability. This particular MOSFET can easily support 15V drain-to-source voltage, 45 amps of drain current, and -55 to 150oC working temperature range. The FQPF45N15V2 is a maximum of 45W/in2 for a 60mm x 60mm printed circuit board (PCB). It has a typical Drain Source on-state resistance of only 0.02 ohm. It also has a low gate charge and low Coss capacitance. This specific MOSFET transistor is a fully characterized surface-mountable, fast-switching MOSFET transistor. The FQPF45N15V2 is provided in a fully-isolated plastic package, for better isolation and better stability. The FQPF45N15V2 is available in both plastic and metal body versions, providing an optimal solution for many applications. The FQPF45N15V2 application field and working principle are as follows: Application Field: The FQPF45N15V2 is widely used in a variety of applications such as motor control, AC/DC drives, battery management systems, and power supply applications, as well as in telecom, computing and consumer electronics. Working Principle: The FQPF45N15V2 is a type of power MOSFET and is based on the MOSFET structure. This MOSFET transistor is a three-terminal device, with the Drain, Source and Gate terminals. The Gate terminal is used to control the Drain-Source current, which is the main function of this type of MOSFET transistor. When the Gate is biased positively with respect to the Source, the Drain-Source current or “on” current will increase. When the Gate is biased negatively with respect to the Source, the “off” current will decrease or turn off. In order for the MOSFET to turn on, gate-to-source voltage must be positive, and the gate current should be greater than the “on” current. Once the gate-source voltage is negative, the “off” current will be very small. The FQPF45N15V2 is a relatively new transistor device, and its features and benefits are making it increasingly popular in a wide variety of applications. It is an ideal device for high-power applications, as it has an extremely low on-resistance, thus making it more efficient. It also has a very wide temperature range of -55 to 150oC, making it suitable for a variety of applications such as motor control, DC/DC converters, power inverters, power supply design, audio amplifiers and power cycling applications. In conclusion, the FQPF45N15V2 is a power MOSFET transistor with multiple applications and a powerful working principle. By its unique design, this transistor can help in circuit design, as well as reduce cost and power consumption. Its low on-resistance and wide temperature range make it both efficient and reliable. Therefore, it is an ideal device for high-power applications.

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