Allicdata Part #: | FQPF16N15-ND |
Manufacturer Part#: |
FQPF16N15 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 11.6A TO-220F |
More Detail: | N-Channel 150V 11.6A (Tc) 53W (Tc) Through Hole TO... |
DataSheet: | FQPF16N15 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 53W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 910pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 5.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.6A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQPF16N15 application field and working principleFQPF16N15 is a field effect transistor (FET), which belongs to the metal oxide semiconductor type and is a type of single FET. The FQPF16N15 is a N-Channel FET, which is often used in computer motherboard designs to reduce wiring complexity. This device is commonly used in power management applications, such as automatic switch/shutoff circuits, current sensing circuits, and voltage regulation. It is also used in load switching circuits and level translators.The FQPF16N15 is a widely used device because it has a low on-resistance and a low gate-to-source capacitance. This makes it ideal for high-frequency circuits that require a low on-resistance and a low gate-to-source capacitance. It also has a high linearity, which helps to reduce noise, distortion, and RF interference. The working principle of FQPF16N15 can be explained as follows. When a voltage is applied to the gate of the FET, an electric field is created that extends from the gate to the channel. This electric field changes the properties of the semi-conducting material, known as the channel, that is between the source and the drain. This change allows the current to flow between the source and the drain, making the FET an effective switch. The electric field also affects the resistance, so that the resistance between the source and the drain is controlled by the voltage applied to the gate. The FQPF16N15 is designed for applications requiring a low on-resistance, low gate-to-source capacitance, and linear operation. It is recommended for operations between -55 and 125 degrees Celsius, and has an absolute maximum voltage of 55 volts. The maximum current rating is also an important aspect, as it determines the amount of power that can be supplied to the FQPF16N15.Overall, FQPF16N15 is a reliable and useful device for various types of control and switching applications. It can be used for both digital and analog circuits, providing a variety of solutions for designers. The device is easy to use, with its low on-resistance, low gate-to-source capacitance and linear operation making it perfect for high-frequency circuits. Its small size also makes it a practical choice, allowing it to be implemented in small devices and systems.
The specific data is subject to PDF, and the above content is for reference
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