FQPF4N50 Allicdata Electronics
Allicdata Part #:

FQPF4N50-ND

Manufacturer Part#:

FQPF4N50

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 2.3A TO-220F
More Detail: N-Channel 500V 2.3A (Tc) 35W (Tc) Through Hole TO-...
DataSheet: FQPF4N50 datasheetFQPF4N50 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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A FQPF4N50 is a type of field-effect transistor (FET) that is part of the single FET family. FETs are three-terminal semiconductor devices that are usually used in electronic applications as amplifiers or switches. FQPF4N50 devices are particularly useful because they can provide very large input impedance and low output impedance, making them ideal for both switching and amplifying applications.

The FQPF4N50 is a depletion-type MOSFET and is constructed from a vertical double-diffused MOS (VDMOS) structure. In this type of device, an n-channel is formed in a p-type silicon wafer, and the channel is created by applying a voltage to the gate. The MOSFET is unique in that it is capable of both enhancement-mode and depletion-mode operation, depending on the applied gate voltage.

The FQPF4N50 device features four terminals: source, drain, gate and bulk. The source and drain are used to provide electrical current flow between the device and external circuitry, while the gate (or gate electrode) is used to control the flow of current. The bulk connection is made between the source and the drain and provides a path for the current to flow through when the device is in the "off" state.

The working principle of the FQPF4N50 is based on the "gate-source" voltage. This voltage is the difference between the voltage applied at the source and gate and determines the type of operation. At a certain "threshold" voltage, the device will begin to operate in the "on" state and current will be allowed to flow between the source and the drain. If a voltage lower than the threshold is applied, the device will remain in the "off" state, thus preventing current from flowing.

The FQPF4N50 is widely used in a variety of applications including power supplies, audio amplifiers, switching circuits, and medical electronics. Its high input impedance, low output impedance, and low power consumption make it ideal for many applications. Moreover, its ability to operate as an enhancement- or depletion-mode FET makes it suitable for use in digital logic and analogue applications.

In conclusion, the FQPF4N50 is an extremely versatile FET device that can be used in a variety of applications. Its ability to operate in either enhancement- or depletion-mode, coupled with its high input impedance and low output impedance, makes it a popular choice for power supplies, switching circuits, audio amplifiers, and medical electronics.

The specific data is subject to PDF, and the above content is for reference

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