FQPF9N50CT

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The FQPF9N50CT is a high performance N-channel Enhancement Mode Field-Effect Transistor (MOSFET). It is designed and manufactured to provide excellent switching performance and low gate-to-drain capacitance for a variety of application fields. The FQPF9N50CT is an ideal fit for high current switching applications, such as DC-DC conversion, motor control and power supply circuits.

FQPF9N50CT Application Fields

The FQPF9N50CT is designed for use in applications where high current and/or high frequency switching is required. The MOSFET has excellent switching performance and low gate-to-drain capacitance, which makes it ideal for high speed switching applications. It can be used in power supply circuits, DC-DC converters, motor control circuits, and other high frequency switching applications.

The FQPF9N50CT is also ideal for power amplification applications. Its low gate capacitance makes it suitable for use as a linear amplifier, providing high gain and linearity in its amplification process. The device is also suited for high power switching applications, such as Class-D amplifiers and high power switching regulators.

FQPF9N50CT Working Principle

The FQPF9N50CT is a high-performance N-channel MOSFET with a working voltage range of 6V to 30V. The device is constructed with a vertical DMOS structure, which enables it to handle high currents with minimal losses. The FQPF9N50CT provides excellent switching performance and low gate-leakage current, making it suitable for a wide range of applications.

The FQPF9N50CT works by allowing a current to flow through it when a sufficient voltage is applied to the gate. As the voltage on the gate increases, the current through the FQPF9N50CT also increases. This is because the gate has a higher: lower ratio than the source, so that when the gate is raised, the current is also allowed to flow. When the voltage on the gate is reduced, the current through the FQPF9N50CT is also reduced, as the ratio between the gate and source is lower.

The FQPF9N50CT also has a low On-Resistance (RDS(on)) and high Current Capability (Ids) to maximise efficiency and reduce power losses in high-current switching applications. It has a maximum drain-source voltage of 500V and can handle currents of up to 46A, making it suitable for high-current switching applications. The device also has an On-resistance variation of 10%, meaning that variations in the gate voltage will not cause large variations in the On-resistance of the device.

The FQPF9N50CT is highly suitable for a wide range of applications, and its excellent switching performance combined with its low gate-to-drain capacitance make it an ideal fit for high current switching and high power linear applications.

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