| Allicdata Part #: | IPB009N03LGATMA1TR-ND |
| Manufacturer Part#: |
IPB009N03LGATMA1 |
| Price: | $ 1.44 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 180A TO263-7 |
| More Detail: | N-Channel 30V 180A (Tc) 250W (Tc) Surface Mount PG... |
| DataSheet: |  IPB009N03LGATMA1 Datasheet/PDF |
| Quantity: | 4000 |
| 1000 +: | $ 1.30563 |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
| Supplier Device Package: | PG-TO263-7-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 250W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 25000pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 227nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 0.95 mOhm @ 100A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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。The IPB009N03LGATMA1 is a vertical-mounting insulated gate bipolar transistor (IGBT) that is designed to provide high efficiency, reduced switching losses, and low-current operation.
The IPB009N03LGATMA1 utilizes a triple diffused N-channel MOS-Gated structure, with a built-in control and drive circuit enabling it to provide high efficiency and performance. It has a high breakdown voltage, low gate charge, and fast switching speed. Additionally, it has an advanced circuit protection system for improved reliability.
The IPB009N03LGATMA1 is an ideal solution for use in applications requiring high efficiency and low current operation, such as high frequency inverters, solar charging systems, LED lighting, and uninterruptible power supplies (UPS).
Application Field and Working Principle
The IPB009N03LGATMA1 is a high-performance, low-current IGBT designed for power conversion applications. It can be used in inverters, UPSs, solar systems, and LED lighting applications. The device utilizes a triple diffused N-channel MOS-Gated structure and is capable of providing high efficiency and switching performance.
When the gate of the IGBT is positively charged, the current in the load path is increased. This causes the load current to flow through the IGBT and into the load circuit. The IGBT switches at the proper voltage and current levels, allowing for efficient power transfer. The built-in control and drive circuit enables the IGBT to switch quickly, allowing for fast and efficient conversion of power.
The IPB009N03LGATMA1 also features an advanced circuit protection system, which helps to ensure reliable, long-term operation. The IGBT also features a variety of protection features, including overload, short circuit, and over-temperature protection. This helps to protect the IGBT and its associated circuits from damage or failure.
Overall, the IPB009N03LGATMA1 is an excellent choice for use in high-efficiency, low-current applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| IPB05N03LA G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 80A D2PAK... |
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| IPB042N03LGATMA1 | Infineon Tec... | 0.56 $ | 1000 | MOSFET N-CH 30V 70A TO-26... |
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| IPB05N03LB | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
| IPB037N06N3GATMA1 | Infineon Tec... | 0.6 $ | 1000 | MOSFET N-CH 60V 90A TO263... |
| IPB096N03LGATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 35A TO-26... |
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| IPB009N03LGATMA1 | Infineon Tec... | 1.44 $ | 4000 | MOSFET N-CH 30V 180A TO26... |
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| IPB017N08N5ATMA1 | Infineon Tec... | 2.28 $ | 2000 | MOSFET N-CH 80V 120A D2PA... |
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| IPB011N04NGATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 180A TO26... |
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