Allicdata Part #: | IPB048N15N5ATMA1TR-ND |
Manufacturer Part#: |
IPB048N15N5ATMA1 |
Price: | $ 2.72 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 120A TO263-3 |
More Detail: | N-Channel 150V 120A (Tc) 300W (Tc) Surface Mount P... |
DataSheet: | IPB048N15N5ATMA1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 2.47521 |
Vgs(th) (Max) @ Id: | 4.6V @ 264µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7800pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 8V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IPB048N15N5ATMA1 is a N-Channel MOSFET with a minimum drain-source voltage rating of 48V, maximum drain current of 18A, and a maximum power dissipation rating of 200W. It has a wide range of application fields and an even wider varities of working principles. This article will discuss those applications, as well as its working principles.
Applications of IPB048N15N5ATMA1
IPB048N15N5ATMA1 has many different application fields. It is typically used for DC-to-DC conversion and power control in many different kinds of circuits. It is also commonly used for low-side and high-side switching for motors, relays, and solenoids. The MOSFET can also be used for load switching applications such as battery disconnect switches.
In addition, IPB048N15N5ATMA1 is ideal for many automotive applications, including air conditioning and light dimmer switches. It can also be used in power amplifier circuits to provide adjustable voltage levels. Additionally, the MOSFET is frequently used in audio amplifiers and low-noise amplifiers, as well as in high frequency power supplies, and power control circuits.
Working Principle of IPB048N15N5ATMA1
The IPB048N15N5ATMA1 is a type of MOSFET that utilizes a gate voltage to control a current flow between source and drain terminals. when in an OFF state, the MOSFET gate is biased negative relative to the drain, creating an electrostatic barrier between the gate and drain. This barrier prevents current from flowing between the gate and drain.
When the gate voltage exceeds the threshold voltage of the MOSFET, then the device will transition from an OFF state to an ON state. In the ON state, the gate voltage is capable of attracting electrons from the source terminal and allowing them to travel through the device and reach the drain terminal. This allows for current to flow between the source and drain terminals.
The IPB048N15N5ATMA1 can also be used as a switch which can be turned on and off with the application of a gate voltage to control the current flowing between source and drain. By controlling the gate voltage, current can be turned on or off. This makes the MOSFET suitable for a wide range of applications including DC-to-DC conversion, power control and switching, and load control.
Conclusion
The IPB048N15N5ATMA1 has numerous applications in the fields of power control and load switching. It utilizes a gate voltage to control the current flow between source and drain terminals, allowing it to be used as both a switch and a regulator. It is a versatile MOSFET that can be used in many different sorts of circuits.
The specific data is subject to PDF, and the above content is for reference
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