IPB017N08N5ATMA1

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The IPB017N08N5ATMA1 is a N-Channel MOSFET with an ultra-low on-resistance in a lead (Pb)-free, thermally enhanced package that is suitable for high current (17A) switching applications. It is a perfect solution for use in DC-DC converters, voltage regulator architectures, and other high current load switches.

Application Field

IPB017N08N5ATMA1 has a wide range of application in industrial, energy engineering and consumer electronics. It is suitable for servers, high power density chargers, adapter, electronic ballast, DC motor drives and other equipment.

Working Principle

IPB017N08N5ATMA1 is an N-channel enhancement-mode MOSFET. It operates based on the principle of enhancement mode, which means that applying a negative gate-to-source voltage will increase the channel current. The device has an ultra-low on-resistance with a blocking voltage of 700V and a drain-source on-characteristic that is extremely fast.

When the gate voltage is higher than the threshold voltage, the resistance between the source and the drain will be decreased significantly, the current from the drain to the source can be turned on. When the gate voltage is lower than the threshold voltage, the resistance will be increased, the current from the drain to the source can be cut off.

The device also has low gate-charge (Q g) which helps reduce EMI and power losses since the power losses are proportional to the switching frequency and gate-charge. This makes the device suitable for high frequency operations, helping reduce system-level cost.

Conclusion

The IPB017N08N5ATMA1 is an ultra-low on-resistance N-Channel MOSFET with a wide range of applications in industrial, energy engineering and consumer electronics. It operates based on the principle of enhancement mode, which means that applying a negative gate-to-source voltage will increase the channel current. The device also has low gate-charge (Q g) which helps reduce EMI and power losses, making the device suitable for high frequency operations.

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