IPB036N12N3GATMA1

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IPB036N12N3GATMA1 belongs to the field of transistors, specifically FETs and MOSFETs, and it is a single device.

Characteristics of IPB036N12N3GATMA1

IPB036N12N3GATMA1 is a high power device with the power rating of 36A, the drain-source breakdown voltage of 1200V and drain-source on-resistance of 5mΩ. This transistor is capable of working under high withstanding voltages as per its characteristics. It also has a relatively low Gate threshold voltage of 2V and low output capacitance of 317pF.

Applications of IPB036N12N3GATMA1

Due to its high voltage and power ratings IPB036N12N3GATMA1 is suitable for many applications such as driving LED displays, audio amplifiers, automotive lighting, high power switching, DC/DC converters and many other power switching applications. In addition, this device can be used in applications that require high frequency switching, such as inverters, DC/AC converters and SMPS.

Working Principle of IPB036N12N3GATMA1

IPB036N12N3GATMA1 works on the principle of a metal oxide semiconductor field effect transistor (MOSFET), which is the most commonly used type of transistor today. The MOSFET has four terminals: source, drain, gate and body. It is an insulated gate field effect transistor that relies on the gate-channel region for control of current flow. The MOSFET has an open drain-to-source channel when no voltage is applied to the gate, and when a voltage is applied this creates a conduction path. The drain current, in this case, is therefore proportional to the magnitude of the voltage applied to the gate. The MOSFET is an efficient amplifier, having low gate threshold and a high power to weight ratio.

Conclusion

IPB036N12N3GATMA1 is a high power single transistor belonging to the field of transistors, specifically FETs and MOSFETs. It has very high power and voltage ratings, making it ideal for high power switching and other applications that require high frequency switching. It works on the principle of a metal oxide semiconductor field effect transistor (MOSFET) and is an efficient amplifier, having low gate threshold and a high power to weight ratio.

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