Allicdata Part #: | IPB042N10N3GATMA1TR-ND |
Manufacturer Part#: |
IPB042N10N3GATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 100A TO263-3 |
More Detail: | N-Channel 100V 100A (Tc) 214W (Tc) Surface Mount D... |
DataSheet: | IPB042N10N3GATMA1 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 3.5V @ 150µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 214W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8410pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 117nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPB042N10N3GATMA1 is a n-channel enhancement mode silicon gate power field effect transistors (FET). Widely used and available in many package sizes, the IPB042N10N3GATMA1 is perfect for low- to medium-current applications for commercial, industrial, and automotive applications. Operating in the 10 V to 20 V range, this transistor’s low-voltage operation helps reduce the power consumption of the system while still providing the same performance. In addition, the low-power consumption allows the system to run cooler and more efficiently.
The IPB042N10N3GATMA1 works by controlling the amount of current that flows between its drain and source leads. This is accomplished by applying a voltage to the gate terminal, which modulates the flow of electrons through the device. A higher voltage at the gate results in greater current flow, while a lower voltage results in less current flowing through the device.
One of the most popular uses of the IPB042N10N3GATMA1 is in motor drive applications. This device can be connected to the drain to a motor and source to a power source. Applying a voltage at the gate will modulate the current flowing between the drain and source, resulting in the motor spinning at different speeds. As a result, the IPB042N10N3GATMA1 can be used to control the speed of a motor with great accuracy.
Other application fields of the IPB042N10N3GATMA1 include power switches, voltage regulators, and load switches. In addition, this device can also be used as a variable resistor in analog circuits, allowing for fine-tuning of the voltage applied to the circuit. This makes it ideal for many analog feedback circuits, where precision voltage control is necessary.
The IPB042N10N3GATMA1 is also widely used in motor commutation applications. This involves connecting the device to a motor, along with several auxiliary commutation transistors. The gate voltage is then modulated depending on the phase of the motor so as to provide a commutation signal that corresponds to the phase of the motor. This helps to optimize the control of the motor and maintain its performance efficiency.
Another common application of the IPB042N10N3GATMA1 is the control of fluctuating loads, such as the engine load of a vehicle. This FET can be used to regulate the current flowing into the load and help maintain the stability of the electricity supply. This is especially beneficial in automotive applications, where the requirement for high levels of electrical stability is critical.
In summary, the IPB042N10N3GATMA1 is a versatile and reliable low- to medium-power enhancement mode MOSFET. This device is capable of tolerance to extreme temperatures and is capable of handling higher power levels than other MOSFETs. With a wide range of applications, this device can easily meet the needs of a wide variety of power systems. As a result, the IPB042N10N3GATMA1 is an excellent choice for low- to medium-current applications across a variety of industries.
The specific data is subject to PDF, and the above content is for reference
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