IPD30N03S2L07ATMA1

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The IPD30N03S2L07ATMA1 is a 30 Volt N channel Power MOSFET with improved capacity and current handling capability, primarily targeting high performance and power applications such as power supply, IGBT drivers, lamps and heaters, and other power management circuits. It is a member of the IPD family which finds itself among the most popular MOSFETs on the market today, known for their superior performance, reliability, and cost-effectiveness.

The IPD30N03S2L07ATMA1 is designed with a 400V drain-source breakdown voltage, a 20V gate-source breakdown voltage, and an RDS(on) of between 1.5mΩ and 5.3mΩ at 10V and 1.7V drain-source voltage, respectively. These characteristics make it suitable for various medium- and high-power management applications, such as MOSFET drivers for IGBT power switches, pulse width modulators, power supply management, computer interfaces, and many other consumer electronics. Additionally, it is excellent for power device switching and power amplifier applications. It is capable of handling up to 30A currents at 12V, making it suitable for battery-powered systems.

The IPD30N03S2L07ATMA1 features an advanced trench-channel structure with an innovative coplanar technology to reduce the on-state resistance and improve electrical characteristics. It is also equipped with a patented floating channel to reduce the thermal resistance and enhance both the integrated drain-source diode and the linear operation region. Furthermore, it is built to deliver low leakage current, excellent thermal performance, and low input capacitance which contribute to the transistor’s high-frequency switching.

In terms of its working principle, the IPD30N03S2L07ATMA1 is based on a popular MOSFET design. MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are voltage-controlled devices that are widely used in the power and analog circuits. They essentially consist of three input terminals, the source, gate, and drain. The source is responsible for supplying the MOSFET with its input power, the gate for controlling the amount of current passing through the drain, and the drain for providing the output current. To control the amount of current passing through the drain and thus the transistor’s output voltage, the voltage across the gate and the source must be reduced to a certain level. When this happens, the transistor is said to be “on”, while when the difference between the gate and the source is above the threshold level the transistor is said to be “off”.

In conclusion, the IPD30N03S2L07ATMA1 is an excellent example of a power MOSFET transistor. With its superior capacity and current handling capabilities, wide application field and excellent efficiency, it is a popular choice for various high power and analog applications. Its advanced trench-channel structure, coplanar technology, and floating channel allow it to offer superior performance and power management, while still remaining cost-effective. Additionally, its principles of operation are straightforward and can be directly applied to any variety of MOSFET transistor.

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