Allicdata Part #: | IPD30N03S2L10ATMA1TR-ND |
Manufacturer Part#: |
IPD30N03S2L10ATMA1 |
Price: | $ 0.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 30A TO252-3 |
More Detail: | N-Channel 30V 30A (Tc) 100W (Tc) Surface Mount PG-... |
DataSheet: | IPD30N03S2L10ATMA1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.23049 |
Vgs(th) (Max) @ Id: | 2V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IPD30N03S2L10ATMA1 is a high-current, high-frequency, and low on-resistance power MOSFET that plays an important role in many switching power applications.
This is an ideal component for power supplies, appliances, and communication systems. It\'s used as a switch to convert DC to AC in power supply circuits, as a switch in appliances, and as a switch in communication systems. The reliability and performance of this MOSFET are remarkable. The MOSFET can handle high current, high frequency, and low on-resistance with ease and accuracy.
IPD30N03S2L10ATMA1 are also used in other fields such as power conditioning, switching regulators and amplifiers. The physical form of this MOSFET is a three-terminal device with two gates. The two gates can be used for logic purposes, such as turning on and off a load, switching on and off a signal, and controlling a direction of a current flow. This MOSFET also has excellent thermal characteristics and is often used in inverters, switching power supplies, and other thermal management applications.
In terms of its working principle, IPD30N03S2L10ATMA1 operates by exchanging charge carriers between its Source and Drain terminals. A voltage applied to the Gate terminal to control the flow of current in the device. When the Gate voltage is the same as the Source voltage, the device is in cut-off mode and no current will flow. On the other hand, if the Gate voltage is higher than the Source voltage, the device will be in its on-state and current will flow from the Source to the Drain.
IPD30N03S2L10ATMA1 are versatile transistor components that are ideal for a wide range of applications. With its high-current, high-frequency, and low on-resistance, it is used in a variety of power supply and communications applications. The Gate terminals can be used to control the flow of current, and the device can be used to control input or output signals. It also has excellent thermal characteristics, making it suitable for thermal management applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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