Allicdata Part #: | IPD320N20N3GATMA1TR-ND |
Manufacturer Part#: |
IPD320N20N3GATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 34A |
More Detail: | N-Channel 200V 34A (Tc) 136W (Tc) Surface Mount PG... |
DataSheet: | IPD320N20N3GATMA1 Datasheet/PDF |
Quantity: | 7500 |
Vgs(th) (Max) @ Id: | 4V @ 90µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2350pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 32 mOhm @ 34A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Transistors - FETs, MOSFETs - Single
An IPD320N20N3GATMA1 is a single, N-Channel, Enhancement-mode Gallium Nitride (eGaN) Field Effect Transistor (FET). This type of transistor can be used for a wide range of applications, from military and industrial to commercial and consumer electronics.
Application Field
An IPD320N20N3GATMA1 has a wide range of potential applications. This type of transistor has been developed with modern-day applications in mind and can be used in many industries, such as defense, industrial, automotive and even robotics. This type of transistor can also be used in consumer applications such as personal media applications, gaming devices and even medical instruments. The combination of size, cost and power make this type of transistor a great option for modern-day applications.
Working Principle
A transistor is a three terminal device, consisting of a source, a gate and a drain. In this type of transistor, the gate is where the electrical signals are applied to control the current flow through the device from the source to the drain. When a voltage is applied to the gate, it creates an electric field that attracts electrons from the source to the drain. The more voltage that is applied, the greater the electric field and the more electrons will be attracted and the more current will flow. The IPD320N20N3GATMA1 has a breakdown voltage of 20 volts and can handle up to 32 amps of continuous current.
This type of transistor is an enhancement-mode device which means that it can be turned on or off using a voltage. In this type of device, no voltage is required to maintain the state. As a result, this type of transistor can provide high switching speeds, low power consumption and a wide range of applications. This type of transistor is also well-suited for high speed digital logic applications.
Conclusion
The IPD320N20N3GATMA1 is a single, N-Channel, Enhancement-mode Gallium Nitride (eGaN) Field Effect Transistor (FET). This type of transistor can be used for a wide range of applications, from military and industrial to commercial and consumer electronics. The combination of size, cost and power make this type of transistor a great option for modern-day applications. This type of transistor is an enhancement-mode device which means that it can be turned on or off using a voltage and it can provide high switching speeds, low power consumption and a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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