IPD30N12S3L31ATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPD30N12S3L31ATMA1 is a field-effect transistor (FET). It is part of the general class known as insulated-gate field-effect transistors (IGFETs). These types of transistors use a voltage applied to the dielectric material between their gate and their channel, allowing the current to flow between the channel and the drain without a mechanical contact. The IPD30N12S3L31ATMA1 specific device has a voltage rating of 30 volts, a current rating of 12 amperes, and a maximum drain-source on-state resistance (RDS(on)) of 3.31 ohms. It is primarily designed for use in automobiles to control DC electronic motors and other electronic devices.

The FETs of the IPD30N12S3L31ATMA1 type offer a number of distinct advantages over other types of transistors. First, they can switch large currents easily, making them ideal for use in applications involving high voltage and/or current. Additionally, due to their low on-state resistance, they are highly efficient and offer low power losses, helping control the power budget of a system. Lastly, FETs offer low EMI, or electromagnetic interference, and can therefore be used in sensitive electronics applications.

When using the IPD30N12S3L31ATMA1 FET, the drain, gate and source terminals must be connected in the proper order and configuration. To turn on the device, the gate voltage should be greater than the drain voltage, allowing current to flow through the transistor. To turn off the device, the gate voltage should be decreased to below the drain voltage, cutting off the current flow. Since FETs are voltage-controlled devices, the voltage on the gate terminal is sufficient to turn on or off the device.

When being used to control a DC motor, the IPD30N12S3L31ATMA1 should be connected in a bridge configuration. The bridge connections allow the current to flow through the transistor in both directions, enabling it to control the operations of the motor. The gate can then be used to regulate the amount of current flowing through the transistor and the amount of power being supplied to the DC motor. This allows the device to be used to control the speed and torque of the motor.

The IPD30N12S3L31ATMA1 also offers a number of additional features, including low on-state resistance, low gate input capacitance, and excellent thermal resistance, making it ideal for use in a variety of applications. This combined with its long term reliability makes the IPD30N12S3L31ATMA1 an excellent choice for use in automotive applications.

In conclusion, the IPD30N12S3L31ATMA1 is a field-effect transistor designed primarily for use in automotive applications to control DC motors, allowing for the control of speed and torque. It offers a number of advantages due to its low on-state resistance and excellent thermals, making it a reliable and efficient choice for automotive applications.

The specific data is subject to PDF, and the above content is for reference