IPD30N06S223ATMA1

Vgs(th) (Max) @ Id:	4V @ 50µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	100W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	901pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	32nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	23 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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I_{PD30N06S223ATMA1} is a power MOSFET product manufactured by Infineon Technologies, designed to control large currents. It is a single, N-Channel enhancement-mode MOSFET with a low r_ds(on) value, making it the ideal choice for switching DC loads.This power device consists of six pins, each of them with its own function. It has a gate, a drain, and a source that act as inputs or outputs. The gate acts to control the current flow by providing a voltage to the device. The drain and source act as the outputs which control conduction with an electric field. For the package of IPD30N06S223ATMA1, it is a TO-252 with a lead (Pb) free design. The IPD30N06S223ATMA1 can handle a maximum voltage of 30 volts and a current of 30 amperes. For its switching performance, the maximum on-state resistance is only 7 mΩ, allowing for faster conduction and smoother load switching. It also has a maximum operating temperature of 150°C, making it able to operate in extreme temperatures while still providing maximum performance. I_{PD30N06S223ATMA1} is suitable for various applications, such as motor control, power supply, audio amplifiers, and other high-power switching applications. With its low on-state resistance, it can provide materials with an efficient way of controlling the power that it handles. Its greater current handling and temperature operation capabilities also make it suitable for automotive applications, medical applications, and other systems wherein high power switching is required.To understand how this power device works, it is important to first understand the basics of how a MOSFET works. A MOSFET is a semiconductor-based device, composed of four terminals. These terminals are the gate, drain, source, and substrate. A MOSFET works in a way where when a voltage is applied to the gate, it creates an electric field between the drain and source and turns the MOSFET into a conducting state. When the voltage is removed, the electric field dissipates and the MOSFET turns back into its non-conducting state.For the I_{PD30N06S223ATMA1}, its working principle is quite simple. The device works by taking the voltage from the gate and converting it into an electric field between the drain and source. The electric field then allows current to pass through the MOSFET, thus controlling the power. When the applied voltage to the gate decreases, the electric field dissipates and results in the MOSFET turning off. Conclusively, the IPD30N06S223ATMA1 is a reliable power MOSFET device offered by Infineon Technologies that can handle larger currents and operate in extreme temperatures. It has a single, N-channel enhancement-mode MOSFET design with a low r_ds(on) value, making it ideal for switching DC loads. With its capabilities and its various applications, the I_{PD30N06S223ATMA1} is a reliable device that can provide materials with efficient power swapping.

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