IPD30N06S2L23ATMA1 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 50µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	100W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1091pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	42nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	23 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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The IPD30N06S2L23ATMA1 is a 30A, 60V, N-channel MOSFET, suitable for various purposes. It is with low on-resistance, fast switching and excellent power dissipation. It is widely used in computer peripherals, power management, and system switching applications, as well as in battery powered systems and automotive applications.The IPD30N06S2L23ATMA1 is made of a MOSFETs structure, which is composed of a metal gate, source, and drain. A gate oxide layer insulates the metal gate from the channel. When a positive voltage is applied to the gate, the channel is turned on, and the source and drain terminals become conducting. When the voltage to the gate is negative, the channel is turned off and the source and drain terminals are not conducting.The main purpose of IPD30N06S2L23ATMA1 is to control the output voltage and current, to protect the circuit from over-voltage or over-current, to amplify the circuit signal and to reduce power consumption. It can be used as a switch, amplifier, or transient voltage suppression device.The working principle of the IPD30N06S2L23ATMA1 is based on the Gate Current Control. The gate current is the current which flows between the Gate and the Source of the MOSFET. When a gate voltage is applied, a flow of gate current will turn on the MOSFET. Then the source-drain current can flow. By controlling the gate voltage, the gate current can be controlled, which in turn controls the source drain current. Thus the output voltage and current can be controlled.The IPD30N06S2L23ATMA1 can operate at up to 60V and can handle up to 30A. It has a low RDS(on) that allows for a low GDS(on) in order to obtain good performance at high currents. It also has a low gate threshold voltage which allows it to switch at lower voltages. The device has fast switching capability and a high frequency operation due to its low IPD30N06S2L23ATMA1 parasitic capacitance. It also has excellent power dissipation and heat resistance with a thermal resistance of 2/59°C / W.The IPD30N06S2L23ATMA1 is suitable for applications such as PC motherboards, server power supplies, mobile phone power switching, UPS systems, LCD monitors, power DC/DC converters, motor drive circuits, and automotive applications. It is well suited for high current, high frequency, and high efficiency switching operations. The IPD30N06S2L23ATMA1 is a testament to the evolution of semiconductor technology, by providing a reliable and efficient solution to a variety of power applications. It is a versatile device that can be used to make circuits more efficient and resistant to over-current and over-voltage problems, as well as being able to provide fast switching operations while consuming very little power. It is an ideal choice for a variety of power control and switching applications.