IPD320N20N3GBTMA1 Discrete Semiconductor Products

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IPD320N20N3GBTMA1 is a field-effect transistor (FET) commonly used in amplifying electrical signals, providing gain and wide bandwidth. It is based on enhancement-type Metal-Oxide Semiconductor (MOS) technology which provides low-noise operation, high-frequency performance, and low power consumption. This type of transistor is typically found in audio and video applications such as amplifier stages, modulation stages, and small-signal switching.

The IPD320N20N3GBTMA1 is a single-connected, Gate Oxide Isolation (GOI) MOSFET. It is composed of multiple layers of Insulating Gate Oxide, where one layer serves as the semiconductor element. By applying a voltage to this layer, electrons from an adjoining source contact are repelled onto the drain contact, creating a conducting path.

The primary application fields for IPD320N20N3GBTMA1 are high-frequency amplifier stages, audio/video circuits, and modulation circuits. The IPD320N20N3GBTMA1 has a low-noise AM/FM/IF amplifier, allowing it to be used in systems with high-end audio or video components. It offers a near-ideal transfer function with wide bandwidth and low distortion. Its low noise performance means it can be used effectively in small-signal switching circuits.

The MOSFET gives the IPD320N20N3GBTMA1 a low Reverse Transfer Capacitance (TR) drift over temperature, and it provides an excellent linearity at variable voltages. Its matching properties also ensure consistent performance over voltage, temperature, and time. Its low Gate-Drain leakage current ensures reliable performance in systems with high immunity to electrical noise.

In terms of power consumption, the IPD320N20N3GBTMA1 has a high current rating for increased circuit reliability. Its low-voltage operation mode allows for efficient use of current. The device also features a maximum Gate-Source Threshold Voltage (Vth) of -3V, meaning the device can source or sink a large amount of current while consuming low-power.

The IPD320N20N3GBTMA1\'s physical layout also enables increased performance and reliability. Its Gate-Drain Shield and short lead frame allows for greater protection against thermal and electrical interference. Its leads are fully insulated, allowing for increased versatility in mounting designs.

Overall, the IPD320N20N3GBTMA1 is a reliable and efficient MOSFET, providing low-noise operation and high-frequency performance. Its ability to manage a wide bandwidth, low power consumption, and excellent immunity to electrical noise make it an ideal choice for a variety of applications. From amplifier stages to small-signal switching, the IPD320N20N3GBTMA1 is a dependable solution for providing reliable, low-cost electrical signal amplification.

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