IPD35N12S3L24ATMA1 Discrete Semiconductor Products

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The IPD35N12S3L24ATMA1 is a type of enhancement-mode Field-Effect Transistor (FET) which is designed to be used in a wide variety of applications. It is a single MOSFET device constructed with a N-Channel and capable of operating at voltages up to 1200 V and a continuous drain current of 50 A. This device is designed to have low on-state resistance and fast switching time, making it suitable for high-power applications.

The IPD35N12S3L24ATMA1 works by controlling the flow of electrons between two terminals, known as the source and drain. The gate electrode is responsible for controlling this current flow, by controlling the electric field between the source and drain.When the gate electrode is positively charged, more current passes through the source-drain channel and the device is said to be “on”, allowing current to flow. When the gate electrode is negatively charged, less current passes through the source-drain channel and the device is said to be “off”, blocking current flow. The amount of current which flows through the device is determined by the voltage applied to the gate.

The IPD35N12S3L24ATMA1 can be used in a variety of applications thanks to its combination of high maximum voltage and high current handling capability. It can be used as a power switch in home appliances such as washing machines, air conditioners and refrigerators. It can also be used as an inverter in solar power systems and as an amplifier in audio equipment. Its fast switching time and low on-state resistance also makes it suitable for use in switching regulators, motor drives and switching power supplies.

The IPD35N12S3L24ATMA1 is a robust, high-powered MOSFET that is well suited for a variety of applications requiring high current handling capability and/or high voltage operation. Its combination of features makes it a highly versatile device that can be used in applications such as home appliances, motor drives, and switching supplies.

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