IPD30N03S4L14ATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | IPD30N03S4L14ATMA1TR-ND |
Manufacturer Part#: |
IPD30N03S4L14ATMA1 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 30A TO252-3 |
More Detail: | N-Channel 30V 30A (Tc) 31W (Tc) Surface Mount PG-T... |
DataSheet: | IPD30N03S4L14ATMA1 Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.20968 |
Vgs(th) (Max) @ Id: | 2.2V @ 10µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 31W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 980pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 13.6 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPD30N03S4L14ATMA1 is a Low-Voltage Silicon N-Channel MOSFET (Metal Oxide Semiconductor Field-effect Transistor) that is well-suited for applications including load and line regulation, reverse battery protection and active ORing. It is a high-performance, low on-resistance negative Channel MOSFET, offering a substantial reduction in power loss and heat generation compared to solutions using discrete FETs.
Application Fields
- Load and Line Regulation: IPD30N03S4L14ATMA1 MOSFETs are often used as switches to control the voltage and current in line-coupled circuits, such as in power supplies or amplifiers
- Reverse Battery Protection: MOSFETs are used to protect a system from the damaging effects of reversed battery connections, by blocking the current from flowing back into the battery
- Active ORing: The MOSFETs are often used for actively switching between multiple power sources to create a redundant-type architecture, providing peace of mind for the user in case one power source failure.
Working Principle
The IPD30N03S4L14ATMA1 is a single N-channel MOSFET. It works on the basic principle that when a voltage is applied to the Gate, it creates an inversion layer which modulates the resistance between the Source and Drain. As a low-voltage component, it requires an input voltage of 4V, and the Gate-Source threshold is 1.0V. The on-resistance is 27mΩ and the drain-source breakdown voltage is 30V.
The IPD30N03S4L14ATMA1 MOSFET features improved power loss and heat generation when compared with solutions using discrete FETs, allowing it to be used as a key component in a range of applications requiring high-performance power management solutions.
The IPD30N03S4L14ATMA1 MOSFET is a great choice for power management applications which demand high-performance, low on-resistance, and low-voltage switching solutions. It is suitable for use in automotive, industrial, and telecommunication applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IPD30N03S2L07ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 30A TO252... |
IPD30N06S223ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 30A TO252... |
IPD33CN10NGBUMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 27A TO25... |
IPD30N06S2L-13 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 30A TO252... |
IPD30N06S2L23ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 30A TO252... |
IPD33CN10NGATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 27A TO25... |
IPD30N06S2-15 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 30A TO252... |
IPD30N06S4L23ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 30A TO252... |
IPD320N20N3GBTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 200V 34A TO25... |
IPD350N06LGBTMA1 | Infineon Tec... | -- | 2500 | MOSFET N-CH 60V 29A DPAKN... |
IPD35N12S3L24ATMA1 | Infineon Tec... | 0.37 $ | 1000 | MOSFET N-CH 120V 35A TO25... |
IPD30N06S215ATMA2 | Infineon Tec... | 0.37 $ | 1000 | MOSFET N-CH 55V 30A TO252... |
IPD30N10S3L34ATMA1 | Infineon Tec... | -- | 20398 | MOSFET N-CH 100V 30A TO25... |
IPD30N06S2L13ATMA4 | Infineon Tec... | 0.37 $ | 5000 | MOSFET N-CH 55V 30A TO252... |
IPD30N06S4L23ATMA2 | Infineon Tec... | 0.22 $ | 2500 | MOSFET N-CH 60V 30A TO252... |
IPD30N03S4L14ATMA1 | Infineon Tec... | 0.22 $ | 2500 | MOSFET N-CH 30V 30A TO252... |
IPD30N03S2L20ATMA1 | Infineon Tec... | 0.26 $ | 2500 | MOSFET N-CH 30V 30A TO252... |
IPD30N03S2L10ATMA1 | Infineon Tec... | 0.26 $ | 1000 | MOSFET N-CH 30V 30A TO252... |
IPD30N06S223ATMA2 | Infineon Tec... | 0.29 $ | 1000 | MOSFET N-CH 55V 30A TO252... |
IPD30N08S222ATMA1 | Infineon Tec... | 0.41 $ | 1000 | MOSFET N-CH 75V 30A TO252... |
IPD30N12S3L31ATMA1 | Infineon Tec... | 0.33 $ | 1000 | MOSFET N-CHANNEL_100+ |
IPD30N06S2L23ATMA3 | Infineon Tec... | -- | 12500 | MOSFET N-CH 55V 30A TO252... |
IPD30N08S2L21ATMA1 | Infineon Tec... | 0.41 $ | 7500 | MOSFET N-CH 75V 30A TO252... |
IPD320N20N3GATMA1 | Infineon Tec... | -- | 7500 | MOSFET N-CH 200V 34AN-Cha... |
IPD30N03S4L09ATMA1 | Infineon Tec... | 0.25 $ | 32500 | MOSFET N-CH 30V 30A TO252... |
IPD35N10S3L26ATMA1 | Infineon Tec... | -- | 2500 | MOSFET N-CH 100V 35A TO25... |
IPD3024-760S | Inventus Pow... | 13.52 $ | 74 | AC/DC DESKTOP ADAPTER 24V... |
IPD3019-760S | Inventus Pow... | 13.54 $ | 97 | AC/DC DESKTOP ADAPTER 19V... |
IPD3018-760 | Inventus Pow... | 13.54 $ | 56 | 30 WATT DESKTOP POWER SUP... |
IPD3012-760S | Inventus Pow... | 13.64 $ | 91 | AC/DC DESKTOP ADAPTER 12V... |
IPD3024-760 | Inventus Pow... | 13.52 $ | 137 | 30 WATT DESKTOP POWER SUP... |
IPD3019-760 | Inventus Pow... | 13.54 $ | 138 | 30 WATT DESKTOP POWER SUP... |
IPD3015-760 | Inventus Pow... | 13.58 $ | 116 | 30 WATT DESKTOP POWER SUP... |
IPD3012-760 | Inventus Pow... | 13.64 $ | 108 | 30 WATT DESKTOP POWER SUP... |
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