Allicdata Part #: | IPD30N06S2L-13TR-ND |
Manufacturer Part#: |
IPD30N06S2L-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 30A TO252-3 |
More Detail: | N-Channel 55V 30A (Tc) 136W (Tc) Surface Mount PG-... |
DataSheet: | IPD30N06S2L-13 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 80µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 69nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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```htmlThe IPD30N06S2L-13 are one of the most common and widely used transistors on the market today. They are incredibly versatile and can be used in many different applications and devices. They are especially popular with power electronics, such as; DC/DC converters, inverters, amplifiers, and motor controllers, as well as general purpose applications. In this article we will explore the application field and working principle of the IPD30N06S2L-13.
The IPD30N06S2L-13 is an enhancement mode transistors, traditionally classified as a field-effect transistor (FET). It is a member of the P-channel enhancement MOSFET family, making it ideal for low-side switching applications and circuits that require logic-level control. As a single mosfet, the IPD30N06S2L-13 features a maximum DC drain current rating of 30A, a maximum drain-source breakdown voltage rating of 60V, a gate threshold voltage of 4V, and an on-resistance at 10V gate-source of 6.2mOhms. All of these features make the IPD30N06S2L-13 an excellent choice for use in a wide variety of power applications.
The working principle of the IPD30N06S2L-13 is relatively straight forward. When the voltage applied between the gate and source terminals (VGS) is equal to or higher than the threshold voltage (Vth) then the MOSFET enters its enhancement mode, and the current between the drain and source terminals (ID) can flow. When operating in the enhancement mode, the current between the drain and source (ID) is proportional to the amount of voltage applied between drain and source (VDS), multiplied by the transconductance (gm) of the MOSFET. Using Ohm’s law, this means that for a given VDS, the resistance (Rdson), or RDS(on) is equal to the voltage divided by the current.
The IPD30N06S2L-13 is an ideal choice for applications where low-to-medium current needs to be switched on and off, such as in DC/DC converters, inverters, amplifiers, and motor controllers. Many of these applications are found in the automotive, industrial and communications markets. Examples of automotive applications include; LED drivers, fuel injector systems, window lift systems, power steering systems, and many more. In the industrial and communication market, it would be used as a low-side switch in a wide range Mainly these are used in motor control applications.
In summary, the IPD30N06S2L-13 is a versatile and reliable choice when looking for a single MOSFET switch in low-to-medium current applications. A wide variety of these devices can be found in many different applications, making them an ideal choice for a variety of different systems. Furthermore, the relatively low RDS(on) makes it perfect for high efficiency designs that require low power dissipation. Finally, their logical level control and wide gate threshold range make them suitable for a range of both digital and analog systems.
```The specific data is subject to PDF, and the above content is for reference
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