IPD30N06S223ATMA2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPD30N06S223ATMA2 is a planar type metal–oxide–semiconductor field-effect transistor (MOSFET). It belongs to the IPD30N06S family and is available as a D-SUB. This device was released by Infineon Technologies and is ideal for applications that require high speed switching and a wide range of resistance. This article will discuss the application fields and the working principle of the IPD30N06S223ATMA2.

Application Field

The IPD30N06S223ATMA2 is used in a variety of applications including power electronic converters, motor control circuits, and high-frequency DC-DC converters. It is also suitable for pulse modules, PDP (power distribution panel) and PFC (power factor correction) circuits, and high-performance motor controls.

Due to its low conduction and low gate-threshold voltage, its switching time is fast. Its low on-state resistance makes it ideal for applications needing fast switching time and high-efficiency power dissipation. Its low gate-threshold voltage also makes it suitable for low-voltage circuits.

The device is highly reliable and its switching performances are consistent over time.

Working Principle

The IPD30N06S223ATMA2 is a three-terminal power MOSFET with its operation based on the principle of a capacitor. Its gate-drain dielectric layer acts as a capacitive structure that stores electrical charge. When a positive voltage is applied to its gate, the capacitor’s interior becomes positively charged, which attracts electrons from the source, thus forming an inversion layer that allows the device to conduct. The required voltage to turn the MOSFET on is equal to the threshold voltage.

This device has a separate back-gate terminal that facilitates its operation. This terminal has an important role during switching operations as it reduces the power loss during operations. During switching, the back-gate terminal charges up rapidly and discharges at a slower rate. This allows the power loss to be reduced, resulting in higher efficiency.

The IPD30N06S223ATMA2 has an Rds(on) low gate-threshold voltage and maximum drain-source breakdown voltage (BVDSS). These features make the device suitable for use in a variety of applications such as motor control circuits, power electronic converters, and DC-DC converters.

Conclusion

In summary, the IPD30N06S223ATMA2 is a planar type MOSFET that is ideal for use in a variety of applications. It is highly reliable and its switching performances are consistent over time. The device has a separate back-gate terminal that facilitates its operation, resulting in higher efficiency. It has an Rds(on) low gate-threshold voltage and maximum drain-source breakdown voltage (BVDSS), making it suitable for low-voltage applications.

The specific data is subject to PDF, and the above content is for reference