Allicdata Part #: | IPD35N10S3L26ATMA1TR-ND |
Manufacturer Part#: |
IPD35N10S3L26ATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 35A TO252-3 |
More Detail: | N-Channel 100V 35A (Tc) 71W (Tc) Surface Mount PG-... |
DataSheet: | IPD35N10S3L26ATMA1 Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 2.4V @ 39µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3-11 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPD35N10S3L26ATMA1 is a N-Channel MOSFET that is commonly used in electronics and electrical applications, as it is typically employed as a switch, a voltage-controlled in-line resistor, or a voltage-variable element. In fact, these components are so commonly used that it is recognized as a cornerstone for many lightweight electrical equipment applications. This component is made up of two electrodes, the gate and the source, and is a three terminal device.
This component is essentially a type of transistor, specifically a field effect transistor (FET), which has been designed for high-speed and high-current circuits. Its design helps to reduce power requirements, improve noise immunity, and deliver higher on-state current ratings. This component is a semiconductor device that relies on an electric field to control its electrical characteristics such as resistance and conduction.
The IPD35N10S3L26ATMA1 is often used in applications such as power management systems, power supply systems, power device applications, and in driver circuits, as it has a low on-resistance and is capable of blocking high voltages. This component is also able to provide good thermal stability and its linear gate characteristics provide a gate-source voltage immunity of up to 6 volts.
When used as a switch, this component is typically driven by a low-power signal. This signal can then be used to switch the MOSFET on or off, depending on the needs of the circuit. This component is also capable of operating in both transistor and logic mode, providing a variety of levels of output logic. With its fast switching time, this component is perfect for use in back-terminal power source control applications.
The IPD35N10S3L26ATMA1 is also capable of operating as a resistor or voltage-variable element where it is assigned with the task of adjusting the voltage of a circuit. It can also be used as a linear voltage regulator which is ideal for several digital circuits. The component can also provide protection from the danger of accidental short circuits thanks to its low on-state resistance and high breakdown voltage capability.
The IPD35N10S3L26ATMA1 is particularly useful in power supply systems as it can provide fast switching, as well as provide lower current draw than its competitors. Furthermore, this component is highly compatible with other devices as it has an excellent input/output impedance balance. In particular, this component is compatible with switching power supplies.
Generally, the IPD35N10S3L26ATMA1 is a highly efficient and reliable component that is well-suited for a wide range of electrical and electronic applications. Its compact and lightweight design makes it perfect for use in compact and lightweight circuits and systems.
The specific data is subject to PDF, and the above content is for reference
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