IPD30N06S2L13ATMA4 Discrete Semiconductor Products

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The IPD30N06S2L13ATMA4 is a N-channel power MOSFET device manufactured by Infineon Technologies. It is specifically designed for applications that require high speed switching and high-current handling capability. This MOSFET device is able to provide efficient low thermal resistance and lowthreshold switching. It is specifically designed to offer world-class performance in demanding sensing, communication and power management applications.

Application Field and Working Principle

The IPD30N06S2L13ATMA4 is primarily used in general purpose switching and high-current load switching applications. It is suitable for the design of power switches, DC-DC converters, high frequency inverters and in the designs of low to medium power motor drives. It is typically used in high frequency DC-DC converters, small audio amplifiers, and motor drives. This MOSFET device is particularly suitable for applications that require very low power loss and low on-resistance.

The IPD30N06S2L13ATMA4 is based on Infineon’s PrimeCell Technology. This technology is designed to ensure that the MOSFET device has a low on-resistance and low gate charge. In addition, the device may be operated at high frequency switching, which ensures that it dissipates very low power losses. The MOSFET device is also equipped with an optimized static drain-source on-resistance. This ensures that the device has excellent I(DSS) and low R(DS)(on) characteristics. The device is also designed to offer very low creepage and clearance distance, thus providing a safe and reliable operation.

The IPD30N06S2L13ATMA4 is designed to operate in a linear region of operation. This means that the device is able to conduct very low drain-source on-state resistances. This type of operation also helps to reduce the amount of power consumed by the device. This is because the linear region of operation is used to regulate the amount of current that flows through the device. At the same time, it can also provide excellent performance in high frequency switching applications.

The IPD30N06S2L13ATMA4 can be used in a variety of different applications. It is particularly suitable for use in consumer electronics, home appliances, telecoms and networking equipment, automotive applications, and industrial automation and control systems. In addition, the device can also be used in applications that require high speed switching and high current handling capability. This makes the device an ideal solution for applications that require a safe and reliable operation.

The IPD30N06S2L13ATMA4 is designed to offer excellent performance in a wide range of operating temperatures. It can operate at temperatures from -55°C to 175°C. This allows the device to be used in a wide variety of applications. In addition, the device is able to operate in a voltage range of 4.5V to 14V. This enables the device to be used in a variety of different DC-DC converters and switches.

In summary, the IPD30N06S2L13ATMA4 is a N-channel power MOSFET device manufactured by Infineon Technologies. It is specifically designed to offer world-class performance in demanding sensing, communication and power management applications. It is primarily used in general purpose switching and high-current load switching applications. In addition, it can be used in a variety of different applications, including consumer electronics, home appliances, telecoms and networking equipment and industrial automation and control systems. The device is also designed to offer excellent performance in a wide range of operating temperatures.

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