
IPD33CN10NGATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | IPD33CN10NGATMA1TR-ND |
Manufacturer Part#: |
IPD33CN10NGATMA1 |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 27A TO252-3 |
More Detail: | N-Channel 100V 27A (Tc) 58W (Tc) Surface Mount PG-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.34000 |
10 +: | $ 0.32980 |
100 +: | $ 0.32300 |
1000 +: | $ 0.31620 |
10000 +: | $ 0.30600 |
Vgs(th) (Max) @ Id: | 4V @ 29µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 58W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1570pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 33 mOhm @ 27A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPD33CN10N-GATMA1 transistor is a robust and reliable MOSFET power field effect transistor (FET) designed for use in a variety of industrial applications. The IPD33CN10N-GATMA1 is a single power MOSFET that can be used for electronic loads, motors and other circuits that require switching.The IPD33CN10N-GATMA1 transistor is robust and reliable with a variety of features, including a low on resistance of just 33 milliohms, a current rating of up to 10 amps and an operating voltage of up to 60 volts. The IPD33CN10N-GATMA1 is also temperature compensated and capable of switching on and off at high frequency, making it an ideal choice for a wide range of industrial applications.What makes the IPD33CN10N-GATMA1 such an ideal transistor is its working principle. The IPD33CN10N-GATMA1 works through a gate capacitor, which effectively controls the amount of current that can flow through the transistor. This is referred to as the gate capacitance, which is determined by the applied voltage and the gate length of the transistor.The gate capacitance of the IPD33CN10N-GATMA1 is a function of the applied voltage and the saturable oxide oxide phenol (SOOP) layer thickness of the transistor’s gate oxide layer. The SOOP layer thickness can be adjusted to increase the gate capacitance and reduce the on resistance of the IPD33CN10N-GATMA1. The gate capacitance plays a crucial role in determining the maximum current that the transistor can handle.The gate voltage of the IPD33CN10N-GATMA1 is adjustable, allowing the user to achieve a desired level of performance from the transistor. The IPD33CN10N-GATMA1’s high current rating combined with its adjustable gate voltage makes it an ideal choice for applications that require high current loads.The IPD33CN10N-GATMA1 is highly efficient and capable of switching up to 30,000 cycles per second with a power loss of less than 50mV. This makes the IPD33CN10N-GATMA1 ideal for many industrial applications, such as automotive, telecom, consumer electronics, instrumentation and industrial control products.In addition to its features, the IPD33CN10N-GATMA1 is also easy to install and use. The transistor includes built-in protection circuitry, and is available in a variety of packages, ensuring that users can easily tailor the device to fit their application needs.The IPD33CN10N-GATMA1 has been designed with reliability and durability in mind, making it an excellent choice for industrial applications. The IPD33CN10N-GATMA1 is an ideal choice for applications that require a reliable and reliable power MOSFET transistor.
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