
Allicdata Part #: | IPI029N06NAKSA1-ND |
Manufacturer Part#: |
IPI029N06NAKSA1 |
Price: | $ 1.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 24A TO262-3 |
More Detail: | N-Channel 60V 24A (Ta), 100A (Tc) 3W (Ta), 136W (T... |
DataSheet: | ![]() |
Quantity: | 457 |
1 +: | $ 1.53000 |
10 +: | $ 1.48410 |
100 +: | $ 1.45350 |
1000 +: | $ 1.42290 |
10000 +: | $ 1.37700 |
Vgs(th) (Max) @ Id: | 2.8V @ 75µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4100pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 2.9 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IPI029N06NAKSA1 Application Field and Working Principle
IPI029N06NAKSA1 is a through-hole n-channel MOSFET with low threshold voltage. It uses a low-voltage process and is capable of driving larger loads with minimal power dissipation. It is used in a wide range of applications, including motor control, audio, power supply, and data communications, just to name a few. Its unique design enables it to be a cost-effective solution for many applications. Below, we explain the application field and working principle of the IPI029N06NAKSA1.
Application Field
IPI029N06NAKSA1 is widely used in both analogue and digital applications. It is often used in motor control applications due to its ability to drive larger loads with minimal power consumption. It can also be used in audio circuits, power converters, and in data communications systems. Other applications include switchmode power supplies, servo systems, and general-purpose power amplifiers. In all of these applications, it provides robust and reliable performance.
Working Principle
The IPI029N06NAKSA1 is a three-terminal, n-channel MOSFET. It operates by the principle of the enhancement-mode MOSFET. This means that the drain current ID is generated by electrons spilling over from the channel region to the drain. The electrons are controlled by the applied gate-source voltage. When this voltage increases above the threshold voltage, the channel forms and electrons start to flow, resulting in an increase in the drain current. Conversely, when the gate-source voltage is below the threshold voltage, the channel closes and the current ceases to flow. This characteristic makes the device particularly suitable for use as a switch or an amplifier.
Advantages
The main advantage of the IPI029N06NAKSA1 is its low threshold voltage and low on-state resistance. This enables it to drive larger loads with minimal power dissipation. Additionally, the device features fast switching times and excellent linearity, making it suitable for use in both analogue and digital applications. Its robust construction and wide operating temperature range make it an ideal choice for many applications.
Conclusion
The IPI029N06NAKSA1 is a through-hole n-channel MOSFET with low threshold voltage and low on-state resistance. It is suitable for a wide range of applications, including motor control, audio, power supply, and data communications, just to name a few. Its fast switching times, excellent linearity, and robust construction make it an ideal solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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IPI052NE7N3 G | Infineon Tec... | -- | 1000 | MOSFET N-CH 75V 80A TO262... |
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