IPI084N06L3GXKSA1 Allicdata Electronics
Allicdata Part #:

IPI084N06L3GXKSA1-ND

Manufacturer Part#:

IPI084N06L3GXKSA1

Price: $ 0.69
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH TO262-3
More Detail: N-Channel 60V 50A (Tc) 79W (Tc) Through Hole PG-TO...
DataSheet: IPI084N06L3GXKSA1 datasheetIPI084N06L3GXKSA1 Datasheet/PDF
Quantity: 1000
500 +: $ 0.62013
Stock 1000Can Ship Immediately
$ 0.69
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 79W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Transistors, especially Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), play a crucial role in many different types of electronic circuits. FETs are primarily composed of three terminals, which are the source (S), drain (D), and gate (G) of the FET. The MOSFET is an enhancement of the FET and is especially popular because of its various advantages over traditional types of transistors, such as its low-power consumption and high switching speeds.One popular MOSFET that is widely used across different industries is the Infineon Technologies IPI084N06L3GXKSA1. This component has the capability to provide a wide-range of applications due to its efficient performance characteristics. It is a N-channel enhancement-mode MOSFET that is commonly used for switching purposes. IPI084N06L3GXKSA1 also features low on-resistance and low gate-charge characteristics and is capable of switching high loads with low power-loss.The working principle of IPI084N06L3GXKSA1 is fairly straightforward and involves the gate-source threshold voltage. When a positive voltage is applied to the gate of the IPI084N06L3GXKSA1, the gate-source voltage allows for the flow of current from the source to the drain of the MOSFET via the channel created between the source and the drain. When the voltage is removed, the MOSFET is shutoff.The IPI084N06L3GXKSA1 MOSFET can be used in many different electronic applications. It is most commonly used in power circuits as it offers low-power consumption with high switching speeds. It can also be used as a switch in high-voltage applications, such as HVAC systems, electric power transfer systems, and various other applications. The IPI084N06L3GXKSA1 is also used in current sensing circuits, as it offers a low on-resistance for current sensing applications. It is also used in motor driver circuits, such as in brushless DC motor (BLDC) drives.Due to its low-power consumption and high switching speeds, IPI084N06L3GXKSA1 is highly suitable for use in automotive application, in passenger cars, and in commercial vehicles, such as buses and trucks. It can be used as a power device to switch between active devices. It can also be used in automotive engines and in other automotive electronics, as it offers a high switching speed and a low on-resistance. In summary, the Infineon Technologies IPI084N06L3GXKSA1 is a powerful and efficient N-channel enhanced-mode MOSFET that is used in many different industries. It features low on-resistance and low gate-charge characteristics and is capable of switching high loads with low power-loss. The MOSFET can be used in automotive applications, HVAC systems, motor drives, current sensing circuits, and many other applications.

The specific data is subject to PDF, and the above content is for reference

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