IPI09N03LA

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The IPI09N03LA is a high-performance Insulated Gate Bipolar Transistor (IGBT) with an integrated gate driver. It is part of Infineon\'s PrimePACK™ family of high-power discrete transistors.

The IPI09N03LA is a 900V N-channel, enhancement-mode IGBT with a high current rating of 130A/phase for improved power density, reliability and ruggedness. The robust device offers low conduction loss, fast switching performance and a rugged design. The integrated gate driver provides fast switching and prevents false triggering.

The IPI09N03LA is ideal for power conversions in high power, high voltage applications such as automotive inverters, motor control, welding, solar or wind inverters, uninterruptible power supplies (UPS), and SMPS. This device enables better performance than conventional solutions by allowing higher current ratings and offering fast switching at low conduction and/or switching losses.

The IPI09N03LA is designed and qualified for use in high temperature environments. It is qualified for operation up to 150°C and can handle short-term voltage and thermal cycles. This makes it well suited for extreme temperature applications such as electric vehicles, solar and wind inverters, and welding.

The IPI09N03LA is designed with a high-side N-channel IGBT and a low-side P-channel MOSFET for switchmode power supplies (SMPS), motor control, lighting, and other power applications. It can handle a maximum peak current of 130A in a single-package, greatly reducing space and cost. The chip features a built-in low-side driver with reverse-blocking capability to reduce noise. The integrated driver also prevents false triggering and optimizes performance.

The IPI09N03LA offers improved efficiency and increased power density with its fast switching, reliable operation and its integrated gate driver. It also features temperature protection, UVLO, under-voltage lockout, over-current protection, and other features that make it highly reliable and robust. The device is available in a compact 9mm x 10mm surface mount package and is RoHS compliant.

In summary, the IPI09N03LA is a high-performance, high-reliability 900V N-channel, enhancement-mode IGBT with an integrated gate driver. It is designed for high power, high voltage applications and offers excellent performance, fast switching, and integrated protection features. The device is suitable for applications such as automotive inverters, motor control, welding, solar or wind inverters, UPS, and SMPS. Thanks to its integrated gate driver, the IPI09N03LA delivers excellent performance in terms of power density, efficiency, and reliability.

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