IPI072N10N3GXKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPI072N10N3GXKSA1 is a planar, N-channel, MOSFET transistor that belongs to the family of single-channel FETs. This particular model has its maximum drain current set at a low 71A and uses a robust low gate charge at 18nC. Combined with its low front gate threshold voltage of 2.1V, this MOSFET is especially tailored for optimal performance in many switch mode power supplies and DC-DC converters.

The IPI072N10N3GXKSA1 is ideal for synchronous rectification, ideal diode solutions, buck/boost converters and free-wheeling. Because it\'s made with a gate-charge-optimized process, this device is designed to meet the requirements of both high-efficiency and high power density solutions. Depending on the application, it\'s also possible to configure the IPI072N10N3GXKSA1 with a Logic Level gate drive.

The source current is rated up to 9A at an on-resistance (RDSon) of 5.2mΩ, making it an ideal component for a wide range of power delivery applications requiring relatively high current levels. This device also features a second channel, represented by the drain-source diode, which supports both negative- and positive-controlled devices as well as improving overall efficiency of the system.

Due to its low gate threshold voltage and low gate charge, the IPI072N10N3GXKSA1 has the ability to efficiently transfer the electricity and handle a wide range of voltage and power. This quality makes it a great option for most switch mode power supplies, DC-DC converters, battery chargers and various other applications. Its low on-resistance value of 5.2mΩ and the ability to handle a high source current of up to 9A makes it a highly efficient device as well.

The IPI072N10N3GXKSA1 operates mainly using two principles: the ohmic principle and the field-effect principle. Using the ohmic principle, the current through the transistor is proportional to the voltage applied to the gate. The field effect principle suggests that the electric current is affected by an externally applied electric field, which induces electric charge carriers in the transistor which in turn results in the current flow. This makes the device incredibly efficient and power-saving.

In conclusion, the IPI072N10N3GXKSA1 is an ideal offering for power delivery applications that require relatively high currents as it efficiently combines low on-resistance, low gate charge and low gate threshold voltage into one. This makes it excellent for a wide variety of applications, including switch mode power supplies, DC-DC converters and battery chargers. The high source current of 9A and the simple two-principle operation of the IPI072N10N3GXKSA1 make it an exceptionally efficient device that can offer excellent performance.

The specific data is subject to PDF, and the above content is for reference