IPI075N15N3GHKSA1 Allicdata Electronics
Allicdata Part #:

IPI075N15N3GHKSA1-ND

Manufacturer Part#:

IPI075N15N3GHKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 150V 100A TO262-3
More Detail: N-Channel 150V 100A (Tc) 300W (Tc) Through Hole PG...
DataSheet: IPI075N15N3GHKSA1 datasheetIPI075N15N3GHKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 270µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5470pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IPI075N15N3GHKSA1 is a high-performance insulated-gate bi-polar transistor (IGBT) module. It is a single long-gate, high-voltage IGBT module with the advanced powerSO-8 packaging technology. The module provides a direct interface to the MOSFET gate, allowing for high-speed switching and excellent power characteristics. It is designed for applications where low gate drive is required and fast switching is desired.

The IPI075N15N3GHKSA1 is suitable for a wide range of applications in different fields, from industrial, telecom and automotive markets to home appliances, power supplies and motor control units. The module is often used in power converters, UPS systems, electric vehicle propulsion systems and portable power tools.

The IPI075N15N3GHKSA1 module is of a single-stage and single-polarity type and can be used in many other applications such as high-frequency switching Converter, DC-DC converters, rectifiers, and inverters. Its main feature is its ability to work at a high blocking voltage allowing it to be used in high-voltage systems.

The working principle of the IPI075N15N3GHKSA1 module is quite simple. It uses an insulated gate in order to shut or open an electric circuit. When the insulated gate is opened, electric current is allowed to pass through the transistor. The current can be controlled by the gate voltage. When the gate voltage is increased, the current is also increased while if the gate voltage is decreased, the current is also decreased.

The IPI075N15N3GHKSA1 module is capable of controlling high-power and high-voltage pulses. The module is manufactured using the latest construction techniques to assure the highest quality and reliability. Its low-voltage drive allows for high-speed switching and excellent power characteristics. The module can work efficiently both for low-frequency, low-power applications as well as for high-frequency, high-power applications.

The IPI075N15N3GHKSA1 module is designed for applications requiring a direct interface to the MOSFET gate, allowing for high-speed and low power switching, excellent power characteristics and robust reliability. It is well suited for high-voltage systems and can be used for a variety of applications both in the industrial, telecom and automotive markets as well as in home appliances, power supplies and motor control units.

The specific data is subject to PDF, and the above content is for reference

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