IPI06N03LA

Series:	OptiMOS™
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	6.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 5V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2653pF @ 15V
FET Feature:	--
Power Dissipation (Max):	83W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO262-3
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

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IntroductionIPI06N03LA is a enhancement-mode MOSFET (metal oxide semiconductor field effect transistor). It is a N-channel with a low on-resistance and low on-voltage. It is designed primarily for power switching applications where fast switching, low losses and low cost are desired. Application FieldIPI06N03LA is mainly used for power switching applications. Such applications include DC/DC converters, switching regulators, high frequency switching, power amplification, and power supply control. It is especially suited for applications with low on-voltage and low on-resistance requirements.Working PrinciplesIPI06N03LA is a semiconductor device that consists of four sections: source, drain, gate and body. The gate is separated from the source and the drain by a thin layer of silicon dioxide, which functions as an insulator. When a voltage is applied to the gate, the electrons in the gate region are attracted by the positive voltage, which in turn causes a decrease in the resistance between the source and drain. This decrease in resistance is referred to as the ‘enhancement-mode’ of the device.The amount of current that can flow from the drain to the source is determined by the voltage applied to the gate. As the voltage is increased, the amount of current that can flow from the drain to the source increases, up to a certain point, where the maximum current is achieved.AdvantagesThe main advantages of IPI06N03LA is its ability to operate at low voltage and low current, making it suitable for applications where a low power dissipation is desired. It is also capable of switching at high speeds, making it ideal for use in high frequency switching. It is also designed to be highly reliable, with a long lifetime and superior reliability. This is due to its robust packaging and monolithic construction. The device also has lower gate capacitance than other power MOSFETs, making it ideal for high frequency switching applications.ConclusionIPI06N03LA is a N-channel enhancement-mode MOSFET designed mainly for power switching applications. It is designed with low on-voltage and low on-resistance, making it suitable for low power dissipation and high frequency switching applications. It also has a long lifetime and superior reliability due to its robust packaging and monolithic construction.

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