IPI032N06N3GAKSA1 Allicdata Electronics
Allicdata Part #:

IPI032N06N3GAKSA1-ND

Manufacturer Part#:

IPI032N06N3GAKSA1

Price: $ 2.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 120A
More Detail: N-Channel 60V 120A (Tc) 188W (Tc) Through Hole PG-...
DataSheet: IPI032N06N3GAKSA1 datasheetIPI032N06N3GAKSA1 Datasheet/PDF
Quantity: 400
1 +: $ 2.01600
10 +: $ 1.82196
100 +: $ 1.46387
500 +: $ 1.13855
1000 +: $ 0.94338
Stock 400Can Ship Immediately
$ 2.22
Specifications
Vgs(th) (Max) @ Id: 4V @ 118µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 188W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IPI032N06N3GAKSA1 is a single N channel enhancement mode MOS Field Effect Transistor (MOSFET). Its main application is as a power switch, used to connect the AC power supply to the load by commutation. It is also used in amplifier circuits and can be used as substitutions for mechanical relays for switching higher voltages and higher currents.

A MOSFET can be thought of as a voltage controlled switch. The gate of the MOSFET is insulated from the drain and source terminals. When a voltage is applied to the gate, it has the effect of controlling the current flowing from the source to the drain. By varying the gate voltage, the flow of current through the MOSFET can be varied.

The IPI032N06N3GAKSA1 has a drain-source voltage rating of 30 Volts and a drain-Source current rating of 3 amps. The maximum power dissipation is 19 Watts. The on-state resistance is about 0.02 ohms. The device is rated for an avalanche energy of 175mJ (min).

The IPI032N06N3GAKSA1 is suitable for applications where higher current driving capability is required. It is ideal for switching motors, solenoids and relays, as well as for AC/DC power conversion and lamp dimming applications. It is also used in audio amplifiers and switching circuits.

The working principle of IPI032N06N3GAKSA1 is based on the formation of an electric field in the channel when a voltage is applied between the drain and source. This in turn creates a conducting path between the two electrodes, depending on the current flowing through the channel. The field can be increased or decreased by changing the gate voltage. This causes current to flow or stop flowing in the channel and hence enables or disables the device.

The IPI032N06N3GAKSA1 is a cost effective, reliable and efficient solution for providing safe and controlled power switching between AC power sources and loads. The device is widely used due to its high current driving capability, low on-state resistance andability to withstand voltage and current surges. Its easy to use, low power dissipation and cost benefits make it an ideal choice for power designs in many applications.

The specific data is subject to PDF, and the above content is for reference

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