IPI030N10N3GHKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPI030N10N3GHKSA1 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET), specifically a single-gate, n-channel MOSFET. This type of MOSFET provides the capability of controlling high-voltage (up to 300V) and high-current applications with lower power loss, and is capable of switching at high frequencies. This transistor is widely used in industrial applications such as motor control, power factor correction and light dimming, and has also found its way into consumer applications like home appliances and energy management. The device includes several features, such as a low threshold voltage, which makes it suitable for driving signals in low-voltage, high-current applications; low input capacitance, which increases switching speed; and a low on-state resistance. Additionally, it has a breakdown voltage rating of 300V and a peak drain-source voltage of 600V, making it suitable for high-power applications.

The basic principle of a MOSFET is that of a voltage controlled resistor. It consists of an N-type substrate and an isolated gate. When a positive gate-to-source voltage (VGS) is applied, the substrate region and the gate region become more conductive, allowing current to flow from drain-to-source. Since the resistance of the MOSFET is dependent on the voltage applied to the gate terminal, it can be used to control the flow of current in a circuit. The amount of current that can be controlled by a MOSFET is known as its “drain current” or “drain current capability”.

The IPI030N10N3GHKSA1 is an easy-to-drive FET, which makes it ideal for switching power in applications such as motor control, inverters, and dimming. The lower gate-source threshold voltage and increased on-state resistance at saturation make it suitable for low-current, low-voltage applications. With a current rating of up to 109A and temperature range from -55 to +175°C, the device provides reliable performance for most general-purpose applications.

In these types of applications, the IPI030N10N3GHKSA1 performs two important roles. First, it serves as the switch through which the current is controlled. That is the “switching” part of MOSFETs. In motor control, PWM (pulse-width modulation) is used to dynamically adjust speed and torque, with the IPI030N10N3GHKSA1 switching current to the motor windings at specific intervals. This is accomplished by controlling the “on” state of the transistor, that is, when the voltage on the gate terminal is at a certain level. The second role of the transistor is to provide current regulation — the MOSFET will regulate the amount of current that passes through the transistor to maintain the desired speed or torque.

In addition to motor control and power factor correction, the device is also useful in the field of light dimming. Light dimming refers to the practice of reducing the amount of light emitted from a light source without changing the intensity of the light source itself. This is done by controlling the current flow to the light source, and the MOSFET is one of the most common means of accomplishing this.

The IPI030N10N3GHKSA1 is an ideal choice for use in a variety of industrial and consumer applications such as motor control, power factor correction, and light dimming. It combines a low input capacitance, low threshold voltage, and low on-state resistance to offer reliable performance in those instances. In addition, it has the capability to handle high voltages, high currents, and high frequencies. As such, this device can be used to provide efficient and reliable performance in many applications.

The specific data is subject to PDF, and the above content is for reference