IPI086N10N3GXKSA1 Allicdata Electronics
Allicdata Part #:

IPI086N10N3GXKSA1-ND

Manufacturer Part#:

IPI086N10N3GXKSA1

Price: $ 1.23
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 80A TO262-3
More Detail: N-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-...
DataSheet: IPI086N10N3GXKSA1 datasheetIPI086N10N3GXKSA1 Datasheet/PDF
Quantity: 405
1 +: $ 1.10880
10 +: $ 0.98280
100 +: $ 0.77660
500 +: $ 0.60224
1000 +: $ 0.47546
Stock 405Can Ship Immediately
$ 1.23
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 73A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPI086N10N3GXKSA1 belongs to a type of single MOSFET (metal oxide semiconductor field-effect transistor). MOSFETs are widely used in power electronics, as they can offer excellent features in terms of power switching, efficiency and robustness, making them superior to bipolar transistors in some applications. The IPI086N10N3GXKSA1, in particular, is designed for high voltage, low-temperature, surface-mount applications.

MOSFETs operate by manipulating the electric fields within their structure in order to control the flow of electrons. Through the use of a gate voltage, the number of electrons passing through the device can be regulated, allowing for precise current control and low-loss power switching.

The IPI086N10N3GXKSA1, specifically, integrates a vertical power MOSFET and interconnection fastening elements in a single package. This advanced design allows for easy implementation in applications that require a high level of power and efficiency at a very small size.

The main application of the IPI086N10N3GXKSA1 is in switching power supplies. The device offers a wide range of features that can enhance the performance of power converters, including its excellent breakdown voltage, high drive current and low on-resistance. Additionally, its overall structure provides a reliable, long-term solution that can effectively withstand varying temperatures, currents and voltages.

The IPI086N10N3GXKSA1 is also well-suited for motor control, thanks to its wide operating temperature range and proprietary protection circuitry that can properly regulate the source of power. Furthermore, the device ensures stability and a high level of reliability in harsh environments that may require high levels of energy conversion.

Finally, the IPI086N10N3GXKSA1 is also an ideal choice for lighting applications due to its fast switching speed and low switching losses. Additionally, the device has zero reverse recovery current and supports a wide range of load currents, making it an excellent cost-effective solution for small-scale lighting solutions.

Overall, the IPI086N10N3GXKSA1 is an advanced single MOSFET that provides excellent power switching capabilities and high levels of reliability for a variety of applications. The device is ideal for switching power supplies, motor control and lighting applications, and its extensive array of features makes it a great choice for engineers looking for a reliable, cost-effective solution.

The specific data is subject to PDF, and the above content is for reference

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