IPI072N10N3GXK

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPI072N10N3GXK is a silicon n-channel trench MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is designed for high performance hardware applications that require very high current and voltage handling capabilities. The device is designed for use as a switch in power electronics control, power transmission and distribution applications. In addition, it can also be used in high voltage, low voltage and medium voltage applications.

A MOSFET, in theory, has an infinite input impedance, while its output impedance is proportional to the gate-source voltage of the device. This makes it ideal for high frequency applications where input impedance is critical. A MOSFET also has very low turn-on and turn-off times and a very low input capacitance, making it suitable for high speed switching applications. Its low on-state resistance combined with its fast switching speed also makes it ideal for power switching applications.

The IPI072N10N3GXK is a trench MOSFET, which utilizes deep trenches on the semiconductor substrate to give it enhanced current and voltage handling capabilities. This allows it to handle high voltages and currents without the need for any external power elements or heat sinking. The trench MOSFET is designed for both high current and high voltage applications and has an R_DS(on) of less than 0.7V at an operating temperature of 150C.

The IPI072N10N3GXK is a voltage operated device, which means that its characteristics are dependent on the voltage applied to the gate terminal of the device. When a positive voltage is applied to the gate terminal, a conducting channel is created between the source and drain of the device, allowing current to pass through. The drain-source voltage varies depending on the voltage applied to the gate terminal. This gives the IPI072N10N3GXK the ability to operate as a switch and as a linear amplifier.

The IPI072N10N3GXK is suitable for a wide range of applications including motor control, uninterruptible power supplies, switch-mode power supplies, DC-DC converters, high voltage inverters and switching applications. It is particularly well suited for medium voltage applications due to its high rated drain-source voltage. The device also has an embedded gate resistance to reduce gate-metastability.

In summary, the IPI072N10N3GXK is a silicon n-channel trench MOSFET designed for high current and high voltage applications. It has an R_DS(on) of less than 0.7V at an operating temperature of 150C and is suitable for motor control, power supplies and high voltage inverters, as well as a variety of other applications. It is also capable of operating as a switch and as a linear amplifier.

The specific data is subject to PDF, and the above content is for reference