| Allicdata Part #: | IPI020N06NAKSA1-ND |
| Manufacturer Part#: |
IPI020N06NAKSA1 |
| Price: | $ 2.10 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 60V 29A TO262-3 |
| More Detail: | N-Channel 60V 29A (Ta), 120A (Tc) 3W (Ta), 214W (T... |
| DataSheet: | IPI020N06NAKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 500 +: | $ 1.88927 |
| Vgs(th) (Max) @ Id: | 2.8V @ 143µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | PG-TO262-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3W (Ta), 214W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7800pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 106nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 2 mOhm @ 100A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 29A (Ta), 120A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Bulk |
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The IPI020N06NAKSA1 is an advanced insulated gate bipolar transistor (IGBT) module that is widely used in intelligent switching, power distribution, robotics, and various other power equipment applications. It is manufactured by Infineon Technologies and is specially designed to provide a low input capacitance, improved switching speed, enhanced thermal efficiency, and higher switching power. In addition to its superior performance, IPI020N06NAKSA1 also features excellent protection features, such as EMC immunity, circuit protection, and fault diagnostic capability.
IPI020N06NAKSA1 is typically used in power switching applications that require both low on-state electrical resistance and low switching time. It has a voltage rating of 600V and can handle high current pulse power up to 420A and high breakdown voltage, providing a considerable amount of power in a small package. Additionally, it features a low inverter gate housing and soft gate drive, allowing for improved power savings. As compared to traditional IGBT modules, IPI020N06NAKSA1 has lower losses and increased efficiency due to its advanced gate control technology.
The working principle of the IPI020N06NAKSA1 is quite similar to other insulated gate bipolar transistor modules. When a high voltage is applied to the gate, electrons are propelled inwards and are attracted to the emitter, leading to the formation of an electric charge. This charge causes a silicon oxide layer to be formed on the gate and the base region, which in turn generates a current that switches the transistor on or off. In order to regulate the flow of electrons, the voltage applied to the gate is adjusted. When the voltage reaches a certain level, a current is created that flows from the current sources and the transistor is switched on.
IPI020N06NAKSA1 is an ideal choice for power switching applications, offering both low resistance and quick switching time. Additionally, its advanced gate control technology enables improved power efficiency, as compared to IGBT modules. Its high current pulse rating and on-state resistance make it suitable for a variety of demanding power switching applications, such as robotics, power distribution and intelligent switching. Due to its small size and the inclusion of a wide array of protection features, IPI020N06NAKSA1 is considered to be one of the most reliable and durable IGBT modules currently in the market.
The specific data is subject to PDF, and the above content is for reference
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IPI020N06NAKSA1 Datasheet/PDF