IPI040N06N3GXKSA1

Vgs(th) (Max) @ Id:	4V @ 90µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	PG-TO262-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	188W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	11000pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	98nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	4 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	90A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction to IPI040N06N3GXKSA1

The IPI040N06N3GXKSA1, also known as an insulated gate bipolar transistor (IGBT), is a power semiconductor device used to control and switch large electrical currents. It is a type of field-effect transistor (FET) that has two distinct, source and drain electrodes, separated by an insulation layer. Unlike other FETs, an IGBT employs a three-terminal design, where an additional control terminal, the gate, is added between the source and drain. This enables the device to provide a voltage-controlled current source during operation.

Principle of Operation

An IGBT\'s working principle is derived from its lattice-like structure. It is based on the fact that, due to the insulation effect of the gate, a potential difference is induced across the p-n junction, which results in controlling the flow of electrons through the device. This explains why the device can be seen as a voltage-controlled current source, since the flow of electrons is limited by the potential difference.The basic concept of IGBT operation involves the setting of an ideal voltage across the gate-drain terminal. This voltage is used to control the conduction of electrons from source to drain. When a strong electrical field is applied to the gate terminal, the barrier voltage will decrease. This decreases the electron flow from source to drain, leading to a decrease in the current. For this to occur, however, the gate-source voltage must not exceed the rated current value. If the gate-source voltage is exceeded, the conduction of electrons is still decreased, but the current through the device will increase, leading to a possible short circuit.

Application of IPI040N06N3GXKSA1

Since IPI040N06N3GXKSA1 has many advantages over traditional FETs, its application is increasing in many power electronic systems. Some of the applications where IPI040N06N3GXKSA1 offers better performance than FETs are switching converters, AC inverters, DC–DC converters, voltage regulators, motor control systems, lighting control systems, and rectifier circuits. In addition, IPI040N06N3GXKSA1 is also used in high-power components like renewable energy systems and high voltage DC transmission systems. With its high switching speed, the device is especially suitable for high-frequency applications, such as those found in communication systems and the telecom industry.

Conclusion

IPI040N06N3GXKSA1 is a three-terminal power semiconductor device that offers many advantages over other FETs. It enables high-voltage operation and offers better switching performance than traditional FETs. It is ideal for applications like switching converters, renewable energy systems, and voltage-controlled current sources.

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