IRF1404SPBF Allicdata Electronics
Allicdata Part #:

IRF1404SPBF-ND

Manufacturer Part#:

IRF1404SPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 162A D2PAK
More Detail: N-Channel 40V 162A (Tc) 3.8W (Ta), 200W (Tc) Surfa...
DataSheet: IRF1404SPBF datasheetIRF1404SPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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IRF1404SPBF is a power MOSFET from the single-field effect transistor (FET) family. MOSFETs are the most preferred type of transistor for a variety of applications and IRF1404SPBF is specifically designed for use in the high-voltage and power system applications. The device utilizes a vertical architecture, which helps in providing high-voltage sensitivity with a low gate charge in addition to a high-temperature operation capability. In addition, the IRF1404SPBF is also able to provide a superior on-resistance as compared to other MOSFET variants. The IRF1404SPBF is also considered to be one of the most reliable FETs available in the market today.

The main advantage of employing the IRF1404SPBF device is its ability to provide superior performance in terms of its power dissipation capabilities. The device is capable of handling more power than the more commonly used MOSFETs and this is particularly beneficial in high-power systems, which require devices with greater power dissipation performance. In addition, the IRF1404SPBF device also exhibits a lower gate threshold voltage as compared to other similar MOSFETs, which makes it well suited for applications that require the device to perform at low supply voltages.

The working principle of the IRF1404SPBF device is based on a vertical current flow from the drain to the source. The device is composed of an n-channel field effect that is connected to the gate and sources, with the drain connected to the externally applied voltages. When the gate voltage is increased, a channel is created between the drain and the source, and current is allowed to flow through this channel. This channel is responsible for controlling the amount of current allowed to flow through the IRF1404SPBF device. The amount of current flowing through the device is directly proportional to the gate voltage applied.

The IRF1404SPBF is highly suitable for industrial automation, consumer electronics and automotive applications. Its primary application is as an efficient motor speed and/or current control switch in systems that require higher reliability and long-term maintenance. The device is also used in high-power lighting applications, as well as in power distribution systems, where it provides excellent low-noise operation. Other applications of this FET include power conversion, DC-DC regulating, and RF amplifiers.

The device is suitable for working with a wide range of voltages and currents, which makes it highly versatile. In addition, the device provides low power dissipation, making it highly energy efficient. Furthermore, it is also resistant to reverse currents and can be used in high-power systems with high efficiency. Due to its high voltage sensitivity, the IRF1404SPBF is able to provide a superior on-resistance that is lower than the on-resistance of other similar MOSFETs.

The IRF1404SPBF provides power system engineers with an advanced device that offers reliable operation, low gate threshold voltage, and low power dissipation. Its high-voltage sensitivity and low-temperature operation capability enables it to be used in high-power systems with excellent reliability and efficiency. Furthermore, its on-resistance and wide range of applications make it an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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