Allicdata Part #: | IRF1324SPBF-ND |
Manufacturer Part#: |
IRF1324SPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 24V 195A D2-PAK |
More Detail: | N-Channel 24V 195A (Tc) 300W (Tc) Surface Mount D2... |
DataSheet: | IRF1324SPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7590pF @ 24V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 240nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.65 mOhm @ 195A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drain to Source Voltage (Vdss): | 24V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF1324SPBF is a N-Channel Power Field Effect Transistor (FET) manufactured by International Rectifier Corporation. This device is suitable for use in a variety of digital and analogue applications such as motor control, switching, inverter circuits, etc. It is also highly suitable for applications requiring low on-state resistance and fast-switching characteristics, making it an ideal component for use in applications such as switching power supplies, DC-DC converters and power management. This component has an absolute maximum ratings of drain-source voltage of 60V, drain-gate voltage of 60V, gate-source voltage of ±20V and continuous drain current of 0.79A. The maximum power dissipation is 1.3W and the maximum operating temperature is +175°C.
The IRF1324SPBF is a single fet component which can be used for field effect transistor switching and amplifiers. It contains an N-Channel MOSFET that operates via a gate terminal to control the flow of electricity. It has three main terminals in total; the source, gate and drain and by modulating the gate terminal voltage the output between the drain and source terminals can be varied. This component has a N-Channel configuration, where the majority carriers are electrons, which means it is suitable for use in circuit designs with negative voltage sources.
In terms of general operation, the IRF1324SPBF works on the principle of a PN junction. When the gate terminal is connected to power, an electric field is generated between the two terminals and electrons are caused to flow in either direction depending on the relative polarity of their charges. This allows the output of the component to be varied based on the voltages present at both the drain and source terminals.
The FET is also known for its low on-state resistance, which is well suited for high frequency applications such as switching power supplies. This is because the FET has high capacitance, which allows it to turn on quickly and easily switch states in response to changes in its gate voltage. Additionally, the FET has low output capacitance, allowing it to remain stable during fast switching cycles.
In terms of applications, IRF1324SPBF is suitable for a variety of motor control, such as in motor driven window wiper applications and DC motor control circuits. It is also an ideal component for use in inverters, as it can be used to effectively switch the supply between two different voltage sources. Additionally, it can be used for digital power management applications due to its low on-state resistance, fast switching capabilities and high capacitance.
Overall, the IRF1324SPBF is a highly useful and reliable component for a variety of digital and analogue applications. Its low on-state resistance, high capacitance and fast switching times allow it to be used in motor control, inverters, power management, switching power supplies and DC-DC converters. Furthermore, its N-Channel configuration also makes it suitable for use in circuits requiring negative voltage sources.
The specific data is subject to PDF, and the above content is for reference
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