IRF1405STRLPBF Allicdata Electronics
Allicdata Part #:

IRF1405STRLPBFTR-ND

Manufacturer Part#:

IRF1405STRLPBF

Price: $ 0.96
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 131A D2PAK
More Detail: N-Channel 55V 131A (Tc) 200W (Tc) Surface Mount D2...
DataSheet: IRF1405STRLPBF datasheetIRF1405STRLPBF Datasheet/PDF
Quantity: 800
1 +: $ 0.96000
10 +: $ 0.93120
100 +: $ 0.91200
1000 +: $ 0.89280
10000 +: $ 0.86400
Stock 800Can Ship Immediately
$ 0.96
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5480pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF1405STRLPBF is a power MOSFET used in a variety of applications. It is a P-channel Classic Ultra Low On-Resistance type MOSFET. IRF1405STRLPBF is a popular choice for many applications requiring high current switching and high speed switching. It is available in three different packages: TO-220, D2PAK, and standard leaded. It has a maximum drain-source voltage of 100 volts and a maximum drain current of 12.5 amps. The drain-source on resistance for this MOSFET is 26mΩ and requires 2.5V for pinch-off. It also has a maximum power dissipation of 3.2 watts.

IRF1405STRLPBF is commonly used in power converters, automotive, DC and brushless DC motor applications, switching regulators, and other high-current switching applications. It is particularly suitable for applications such as power supplies, battery chargers, LED lighting, relays, lamps, high-speed data transmission systems, and audio amplifiers. Its low power dissipation, high current switching, high-speed switching capabilities, and low-on resistance make it an ideal choice for these types of applications.

The working principle of IRF1405STRLPBF is based on the operation of MOSFETs. When a voltage is applied to the gate terminal of the MOSFET, it changes from a high-resistance state to a low-resistance state. This allows current to flow from the source terminal to the drain terminal. This is known as the “on-state” of the MOSFET. When the voltage applied to the gate terminal is reversed, the MOSFET changes to a high-resistance state and current is blocked from flowing, which is known as the “off-state” of the MOSFET.

The IRF1405STRLPBF also has a unique protection feature. This feature is known as “ Current-limiting”. Current-limiting helps to reduce the over-current protection as well as short circuit protection. It works by monitoring the current passing from the drain terminal to the source terminal. If the current passing reaches a certain level, the MOSFET is shut off and the current passing is reduced. This helps to avoid any potential damage to the device.

IRF1405STRLPBF is a versatile and popular MOSFET suitable for many applications. Its ultra low on-resistance, high current and high speed switching capabilities, as well as its current-limiting feature make it a perfect choice for power converters, automotive, DC and brushless DC motor applications, and other high current switching applications.

The specific data is subject to PDF, and the above content is for reference

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