Allicdata Part #: | IRF6722MTR1PBFTR-ND |
Manufacturer Part#: |
IRF6722MTR1PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 13A DIRECTFET |
More Detail: | N-Channel 30V 13A (Ta), 56A (Tc) 2.3W (Ta), 42W (T... |
DataSheet: | IRF6722MTR1PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta), 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 7.7 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.3W (Ta), 42W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DIRECTFET™ MP |
Package / Case: | DirectFET™ Isometric MP |
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IRF6722MTR1PBF is the short form for a MOSFET (metal-oxide-semiconductor field-effect transistor) that is specifically designed to be used in power management, motor control, and light-emitting diodes applications. It is a single, unipolar type transistor. This type of MOSFET is ideal for use in applications where a relatively high level of continuous power handling is required, such as automotive power management and motor control.
This specific MOSFET, the IRF6722MTR1PBF, is made using a process called vertical DMOS (depletion-mode-operate). This process allows for a much greater level of efficiency when it comes to the usage of the MOSFET, helping it to perform better and last longer than standard MOSFETs. The IRF6722MTR1PBF\'s rated power handling capability is 20W. This is more than double the 10W capabilities of most other standards MOSFETs.
The working principle of IRF6722MTR1PBF is quite simple. It works similarly to most other MOSFETs, making use of the capacitance effect between a P-type and an N-type semiconductor material. As current passes through the junction between the two materials, it causes the P-type material to become more conductive, thus allowing for the control of an external circuit.
The IRF6722MTR1PBF is a very high performance device that is especially suitable for use in power management, motor control and light-emitting diode applications. It is also well suited for high-speed switching and mixed-mode signal processing. Due to its ability to handle a large amount of power efficiently, its design allows for greater flexibility when it comes to implementing various circuit designs.
In addition to its power handling capabilities, the IRF6722MTR1PBF also features a high breakdown voltage. This feature allows for the device to be safely used in applications where voltages exceeding normal levels are expected. This feature is especially useful for automotive and aerospace applications which require protection against large sudden changes in voltages.
In summary, the IRF6722MTR1PBF is a single, unipolar type MOSFET that was specifically designed to be used in power management, motor control, and light-emitting diode applications. It is made using a process called vertical DMOS, making it more efficient and reliable than other standard MOSFETs. Its power handling capabilities are great, with a rated power handling of 20W. It also has a high breakdown voltage which is useful for applications that need protection against large sudden changes in voltages. All of these features make the IRF6722MTR1PBF the perfect choice for the specified application field.
The specific data is subject to PDF, and the above content is for reference
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