IRF6706S2TRPBF Allicdata Electronics
Allicdata Part #:

IRF6706S2TRPBF-ND

Manufacturer Part#:

IRF6706S2TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 25V DIRECTFET S1
More Detail: N-Channel 25V 17A (Ta), 63A (Tc) 1.8W (Ta), 26W (T...
DataSheet: IRF6706S2TRPBF datasheetIRF6706S2TRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Package / Case: DirectFET™ Isometric S1
Supplier Device Package: DIRECTFET S1
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.8W (Ta), 26W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 13V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF6706S2TRPBF is a special type of transistor that is manufactured by International Rectifier Corporation. This particular type of transistor is known as an insulated-gate bipolar transistor (IGBT) and was designed to provide reliable, low-voltage switching operations in a variety of applications. It is a popular choice for a range of applications, including power supply switching, motor control and H-bridge control.

An IGBT is a type of semiconductor that combines the elements of both bipolar transistors and MOSFETs. It is made up of two insulated layers (the gate oxide and the source insulation) which together form a 3-terminal structure—an n-type collector and an n-type emitter. The IRF6706S2TRPBF has a VCE sat of 1.2V, a maximum drain current of 8A, a drain-source breakdown voltage of 500V and an average gate-source threshold voltage of 4.0V.

The IRF6706S2TRPBF is most commonly used in power supply and motor control applications due to its low voltage switching operation. The main advantage of this particular IGBT is its high density, which makes it more suited to high power applications than other types of transistors. It is also very reliable, with very little on-resistance and a good switching speed.

The working principle of an IRF6706S2TRPBF is fairly simple; when the gate voltage is applied, the transistor will conduct current between the drain and source terminals. The current will flow until either the gate voltage is reduced or the load current reaches its maximum value. When the current passes through the transistor, it is transferred from the n-type collector to the n-type emitter. This process creates the switching operation.

The IRF6706S2TRPBF can be used in various applications, including audio amplification, DC/DC conversion, motor control, and other power supply related switching operations. It is also commonly used in high power H-bridge control and current sensing circuits.

The IRF6706S2TRPBF is a versatile transistor with a wide range of applications. It offers low voltage switching operation and reliable performance, making it an ideal choice for many types of power supply and motor control. applications. With its high density and low voltage operation, the IRF6706S2TRPBF is an excellent choice for use in many different applications.

The specific data is subject to PDF, and the above content is for reference

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