IRF6718L2TR1PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRF6718L2TR1PBF is a high current enhancement mode (normally-off) P-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) suitable for a wide range of applications. The IRF6718L2TR1PBF belongs to the single field-effect transistor (FET) family and is designed to handle high speed switching and extremely low ON-state resistance while providing rugged and reliable performance.

This MOSFET offers excellent RDS(on) characteristics when compared to similar devices due to its advanced silicon fabrication process. It is offered in a large family of packages including (but not limited to) the 4x4mm SOT-223 surface mount package. It has a maximum drain source voltage (VDS) of 175 V, a RDS(on) at 10V of 30 mOhm (typ), a maximum continuous drain current (ID) at 25°C of 42 A, and a maximum power dissipation (PD) of 42 W at 25°C.

The working principle of the IRF6718L2TR1PBF MOSFET is quite simple. This device consists of two distinct components: a metal-oxide-semiconductor gate and a source/drain region. The source is connected to the negative terminal of the power source. The gate is then connected to the positive terminal of the power source via a gate resistor. When the power source is turned on, an electric field is created between the gate and the source, which causes the gate to “open” and allow charge carriers to flow from the source to the drain. This increases the current between the source and drain and allows a high load to be driven by the device.

The IRF6718L2TR1PBF MOSFET is used in a wide variety of applications such as power management systems, motor control, and power conversion. The low on-state resistance and low gate charge allows this device to switch at very high frequencies. Because of its high current and low resistance, it is also suitable for power supply designs, as well as for switching high-power applications.

The IRF6718L2TR1PBF MOSFET is an excellent choice for use in consumer and industrial applications, providing excellent performance at an impressive price. It is an ideal choice for those looking for a reliable and efficient solution for medium and high power switching applications.

The specific data is subject to PDF, and the above content is for reference