
Allicdata Part #: | IRF634STRL-ND |
Manufacturer Part#: |
IRF634STRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 250V 8.1A D2PAK |
More Detail: | N-Channel 250V 8.1A (Tc) 3.1W (Ta), 74W (Tc) Surfa... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 450 mOhm @ 5.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.1A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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IRF634STRL is a high-speed N-channel MOSFET transistor from International Rectifier (IR). This MOSFET is designed for power switching applications and is capable of operating through breakdown voltages up to 800 volts and with gate drive currents up to 4 amperes. The IRF634STRL has a maximum on-state drain current of 24 amperes and a maximum power dissipation of 80 watts. This MOSFET is also suitable for use in high speed switching circuits, such as DC/DC converters, as well as in power circuits such as motor controls.The IRF634STRL is a single N-channel MOSFET. This means that it has only one N-type channel instead of the typical N and P-type channels found in traditional bipolar transistors. The advantage of the single N-channel MOSFET is its much lower input capacitance, which makes it ideal for high speed switching applications.In order to operate effectively, the IRF634STRL requires a positive gate voltage, usually between 8 and 20 volts, depending on the application. When a positive voltage is applied to the gate, the MOSFET is turned on and the channel is activated, allowing electrons to pass through. When the gate voltage is removed, the MOSFET is turned off and the channel is no longer activated, preventing the flow of electrons.The IRF634STRL is also known for its high switching speed, which helps to reduce power losses due to switching times. The switching time is typically between 0.1 and 50 nanoseconds, depending on the application. Additionally, the leakage current of the device is very low, which helps to reduce on-state power losses.The IRF634STRL is typically used in power switching applications, such as DC/DC converters, motor control systems, and power circuits. It is an ideal choice for those applications which need high switching speeds and low on-state power losses. The device is also well-suited for applications where low leakage current is important, such as in medical equipment or precision devices.The IRF634STRL is available in standard TO-220, TO-220F, and D2PAK packages for mounting on circuit boards. It is also available in surface mount devices for automation.In conclusion, the IRF634STRL is an excellent choice for power switching applications due to its high switching speed, low leakage current, and low on-state power loss. With its wide range of packages, the IRF634STRL is useful for a variety of applications and can be easily integrated into any design.
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