| Allicdata Part #: | IRF6665TR1PBFTR-ND |
| Manufacturer Part#: |
IRF6665TR1PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 4.2A DIRECTFET |
| More Detail: | N-Channel 100V 4.2A (Ta), 19A (Tc) 2.2W (Ta), 42W ... |
| DataSheet: |  IRF6665TR1PBF Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | DirectFET™ Isometric SH |
| Supplier Device Package: | DIRECTFET™ SH |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.2W (Ta), 42W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 530pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 62 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta), 19A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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IRF6665TR1PBF is an N-channel power MOSFET, which is a voltage-controlled field-effect transistor with a gate electrode. It works according to certain rules, controlling the current that passes through it. This is achieved by varying the voltage of the gate electrode, which creates a field in the channel of the transistor that affects the current flow. This type of MOSFET is often utilized in a wide array of applications in the electronics industry. It is especially useful in the circuit of power converters, power amplifiers, power supplies, audio amplifiers, switching mode power supplies, DC to DC converters, and AC to DC converters. For example, the power converters use it to convert high voltage AC input to lower voltage DC output, while the power amplifiers utilize it for power amplification. Additionally, it is used in advanced switching techniques and can even be applied in IoT projects. The pinouts of IRF6665TR1PBF can be seen as Source, Gate, and Drain. Of these, the Gate pin is the main pin and needs to be supplied with a separate voltage different from the one powering the device. It is always important to remember to reverse the pins when connecting to the circuit board so that they are in their corresponding positions. The working principle of the IRF6665TR1PBF is fairly straightforward. When the gate of the transistor is at a positive voltage relative to the source, the resistance between the drain and source pins increases, reducing the flow of current through the transistor. When the gate voltage is decreased, the resistance between the drain and source decreases, thus increasing the amount of current that can flow through it. This makes the IRF6665TR1PBF an excellent choice for tasks requiring a controllable current flow. The IRF6665TR1PBF requires a rather large current for the gate pin due to its large internal capacitance; it must be between 8 and 15 mA or 10 and 20 mA for the fully-specified device. It also has a maximum drain-source voltage of 55 Volts and a Gate-Source threshold voltage of 1.75V and above. The current rating of the IRF6665TR1PBF is up to 5.6 Amperes and its power dissipation is up to 41.25 Watts.In conclusion, IRF6665TR1PBF is a voltage-controlled N-channel MOSFET that is often used in power amplifiers, power converters, and other circuits where a controlled current flow is needed. Its gate pin needs to be supplied with a separate voltage and it has a maximum drain-source voltage of 55 Volts. Additionally, it has a current rating of up to 5.6 Amperes and a power dissipation of up to 41.25 Watts. This makes it an ideal choice for applications needing a controllable current flow.
The specific data is subject to PDF, and the above content is for reference
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