
Allicdata Part #: | IRF6665-ND |
Manufacturer Part#: |
IRF6665 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V DIRECTFET-SH |
More Detail: | N-Channel 100V 4.2A (Ta), 19A (Tc) 2.2W (Ta), 42W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | DirectFET™ Isometric SH |
Supplier Device Package: | DIRECTFET™ SH |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.2W (Ta), 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 530pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 62 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta), 19A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The International Rectifier IRF6665 is a versatile power transistor device. It is a single N-Channel enhancement type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) capable of providing very high speed switching and current handling capabilities. This device is capable of switching currents up to 25A, with a total power dissipation of up to 75W. The IRF6665 is manufactured in various voltages and is used for switching and amplification purposes in various applications.
The IRF6665 has a wide range of applications due to its versatility and performance capabilities. It is used as a load switch in high power applications, such as server power supplies, home appliances, and industrial motor controls. It is also used as a power amplifier in audio amplifiers and instruments, and as a power switch in lighting systems. It is also used in motor control and switching applications for controlling the speed of motors, and for providing overload protection.
In order to understand its working principle, it is important to know that this transistor device is an enhancement type MOSFET. This means that when a voltage is applied on the gate of the device, it is able to control the flow of current through the device, resulting in the device switching on and off. The amount of current that is able to flow through the device is determined by the voltage applied on the gate, as well as by the voltage applied to the drain. This allows for very precise control of current through the device.
In addition, the IRF6665 comes with an inherent body diode, which helps to protect the device from high currents caused due to short circuit. The body diode helps to redirect the current away from the device and thus prevent any damage to the device. This feature helps to greatly increase the reliability of the device and makes it ideal for industrial and high power applications.
Finally, the IRF6665 has a low on-state resistance, making it ideal for applications where low levels of power are needed with low losses. This low resistance helps to reduce the power losses and enables efficient switching. This feature makes it a great choice for power supply and motor control applications.
The IRF6665 is a versatile and powerful device with a wide range of applications. Its wide range of features and performance capabilities make it ideal for applications that require high speed switching, high current handling capabilities, low losses, and body diode protection. Its ability to provide precise current control using the gate voltage makes it an invaluable device in many applications, including server power supplies, lighting systems, and instrument amplifiers. This makes it a great choice for a wide range of applications and projects.
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