
Allicdata Part #: | IRF624SPBF-ND |
Manufacturer Part#: |
IRF624SPBF |
Price: | $ 1.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 250V 4.4A D2PAK |
More Detail: | N-Channel 250V 4.4A (Tc) 3.1W (Ta), 50W (Tc) Surfa... |
DataSheet: | ![]() |
Quantity: | 1594 |
1 +: | $ 1.67000 |
10 +: | $ 1.61990 |
100 +: | $ 1.58650 |
1000 +: | $ 1.55310 |
10000 +: | $ 1.50300 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 2.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRF624SPBF is a N-channel MOSFET transistor produced by the company "International Rectifier". It is a power metal-oxide-semiconductor field-effect transistor that is designed and manufactured for a variety of applications.
IRF624SPBF is a single gate, depleted-mode, and depletion-type MOSFET. It has an ultra-low RDSon at 4.5 mOhms and operates in the high-frequency range of 1.2 MHz and up to 600 kHz. It is fabricated using the advanced HEXFET technology, which offers superior performance and low gate-drain capacitance. The device also features an on-resistance of 2.2 ohms, a gate charge of 11 nC, a gate-source voltage of -20V to +20V, and a breakdown voltage of 20V.
The primary application of IRF624SPBF is in power-supply circuits, motor control and other power management applications. It is suitable for both AC and DC applications and can be used for all types of power converters and power supplies. The device can also be used in amplifier and load switching applications, as well as for switching higher currents and higher voltages.
The working principle of IRF624SPBF is based on the basic principle of MOSFETs. The device is a three-terminal device consisting of a drain, gate and source. The drain and source are separated by an oxide-filled silicon layer, which acts as an insulator. When a positive potential is applied to the gate, electrons are drawn from the source, creating a depletion region in the oxide-filled layer. Since this depletion region has a higher resistance than the source, current can only flow through the device when the gate is activated. When the gate is turned off, the depletion region is created again, blocking current flow.
The IRF624SPBF is a versatile device that can be used in a variety of applications. Its small size, high power output and low gate charge make it an ideal choice for power-supply designs. Its low on-resistance and low gate-drain capacitance make it suitable for high-frequency applications. It is also a reliable device that can handle high-voltage, high-current switching applications.
The specific data is subject to PDF, and the above content is for reference
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